Radiation sensing field-effect transistor

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A radiation sensing field-effect transistor ( RADFET , also RadFET ) is a metal-insulator-semiconductor field-effect transistor (MISFET), the source-drain resistance of which depends on the radiation dose . Ionizing radiation creates electron-hole pairs in the gate area. The electrons flow away while the positive defects in the substrate accumulate. The voltage drop across the transistor increases with the radiation dose. The sensitivity is in the order of 10  mV / Gy to 10 V / Gy.

Due to their small size, easy integration into electrical circuits and the high detectable radiation dose of more than 1 kGy, RADFETs are suitable as radiation dosimeters for satellites.