Smart cut: Difference between revisions
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[[Image:Smart Cut SOI Wafer Manufacturing Schema.svg|thumb|300px|Smart |
[[Image:Smart Cut SOI Wafer Manufacturing Schema.svg|thumb|300px|Smart cut process]] |
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'''Smart cut''' is a technological process that enables the transfer of very fine layers of [[monocrystalline|crystalline]] [[silicon]] material onto a mechanical support. It was invented by Michel Bruel of [[CEA-Leti: Laboratoire d'électronique des technologies de l'information|CEA-Leti]], and was protected by US patent 5374564.<ref name="bruel">{{cite patent | inventor-last = Bruel | inventor-first = Michel | publication-date = 20 December 1994 | title = Process for the production of thin semiconductor material films | country-code = US | patent-number = 5374564}}</ref> The application of this technological procedure is mainly in the production of [[silicon-on-insulator]] (SOI) wafer substrates. |
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'''Smart Cut''' is a technological process that enables the transfer of very fine layers of crystalline material onto a mechanical support. The application of this technological procedure is used mainly in [[silicon-on-insulator]] (SOI). The role of SOI is to electronically insulate a fine layer of [[monocrystalline]] [[silicon]] from the rest of the [[silicon wafer]]; an ultra-thin silicon film is transferred to a mechanical support, thereby introducing an intermediate, insulating layer. [[Semiconductor]] manufacturers can then fabricate [[integrated circuit]]s on the top layer of the SOI wafers using the same processes they would use on plain silicon wafers. The wafers are then cut up and the chips packaged for mounting on the cards that are integrated into electronic systems such as [[personal computer]]s. The Smart Cut process for thin films was developed and is [[patent]]ed by [[Kris V. Srikrishnan]] from [[Wappingers Falls, New York]].<ref name="test">[http://www.google.com/patents?hl=en&lr=&vid=USPAT5882987&id=CqkXAAAAEBAJ&oi=fnd&dq=5882987+us+patent&printsec=abstract#v=onepage&q=5882987%20us%20patent&f=false], US Patent 5882987.</ref> |
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The role of SOI is to electronically insulate a fine layer of monocrystalline silicon from the rest of the [[silicon wafer]]; an ultra-thin silicon film is transferred to a mechanical support, thereby introducing an intermediate, insulating layer. [[Semiconductor]] manufacturers can then fabricate [[integrated circuit]]s on the top layer of the SOI wafers using the same processes they would use on plain silicon wafers. |
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Please refer to the diagram for specifics on what is actually involved in smart cut, beyond the benefits and applications described above. |
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The sequence of illustrations pictorially describes the process involved in fabricating SOI wafers using the smart cut technology. |
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==References== |
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<references /> |
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*[[Silicon on insulator]] |
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*[[Soitec]] |
*[[Soitec]] |
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*[[CEA-Leti: Laboratoire d'électronique des technologies de l'information|CEA-Leti]] |
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[[Category:Microtechnology]] |
[[Category:Microtechnology]] |
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Latest revision as of 08:52, 19 May 2022
Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and was protected by US patent 5374564.[1] The application of this technological procedure is mainly in the production of silicon-on-insulator (SOI) wafer substrates.
The role of SOI is to electronically insulate a fine layer of monocrystalline silicon from the rest of the silicon wafer; an ultra-thin silicon film is transferred to a mechanical support, thereby introducing an intermediate, insulating layer. Semiconductor manufacturers can then fabricate integrated circuits on the top layer of the SOI wafers using the same processes they would use on plain silicon wafers.
The sequence of illustrations pictorially describes the process involved in fabricating SOI wafers using the smart cut technology.
References[edit]
- ^ US 5374564, Bruel, Michel, "Process for the production of thin semiconductor material films", published 20 December 1994