MASTAR MOSFET Model
The MASTAR (Model for Analog and digital Simulation of mos TrAnsistoRs)[1] [2] is an analytical model of Metal-Oxide Semiconductor Field-Effect Transistors, developed using the voltage-doping transformation (VDT) technique [3] [4] . MASTAR offers good accuracy and continuity in current and its derivatives in all operation regimes of the MOSFET devices. The model has been successfully used in CAD/EDA simulation tools[5].
The actual official definition of the acronymus MASTAR is Model for Assessment of CMOS Technologies And Roadmaps.
References
- ^ Skotnicki, T.; Merckel, G.; Denat, C. (1993), "A Model For Analog Simulation Of Subthreshold, Saturation And Weak Avalanche Regions In MOSFETs", International Workshop on VLSI Process and Device Modeling (published May 14–15, 1993), pp. 146–147
{{citation}}: CS1 maint: date format (link) - ^ Skotnicki, T.; Denat, C.; Senn, P.; Merckel, G.; Hennion, B. (1994), "A new analog/digital CAD model for sub-halfmicron MOSFETs", Technical Digest., International Electron Devices Meeting (published Dec. 11-14, 1994), pp. 165–168
{{citation}}: Check date values in:|publication-date=(help) - ^ Skotnicki, T.; Marciniak, W. (1994), "A new approach to threshold voltage modelling of short-channel MOSFETS", Solid-State Electronics, vol. 29, no. 11 (published November 1986), pp. 1115–1127
- ^ Skotnicki, T.; Merckel, G.; Pedron, T. (1994), "The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects", IEEE Electron Device Letters, vol. 9, no. 3 (published March 1988), pp. 109–112
- ^ Modeling MOS Devices Using the MASTAR Model with UTMOST III