SOI MOSFET
In electronics, an SOI MOSFET semiconductor device is a Silicon on Insulator (SOI) MOSFET structure in which a semiconductor layer, e.g. silicon, germanium or the like, is formed above an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate.[1][2][3] SOI MOSFET devices are adapted for use by the computer industry.[citation needed] The buried oxide layer can be used in SRAM memory designs.[4]
References
- ^ United States Patent 6,835,633 SOI wafers with 30-100 Ang. Buried OX created by wafer bonding using 30-100 Ang. thin oxide as bonding layer
- ^ United States Patent 7,002,214 Ultra-thin body super-steep retrograde well (SSRW) FET devices
- ^ Ultrathin-body SOI MOSFET for deep-sub-tenth micron era; Yang-Kyu Choi; Asano, K.; Lindert, N.; Subramanian, V.; Tsu-Jae King; Bokor, J.; Chenming Hu; Electron Device Letters, IEEE; Volume 21, Issue 5, May 2000 Page(s):254 - 255
- ^ United States Patent 7138685 " Vertical MOSFET SRAM cell" describes SOI Buried Oxide (BOX) structures and methods for implementing enhanced SOI BOX structures.