Bipolar junction transistor and Collinson: Difference between pages

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'''Collinson''' may refer to:
{{dablink|'''BJT''' redirects here. For the Japanese language proficiency test, see [[Business Japanese Proficiency Test]].}}


==People==
A '''bipolar (junction) transistor''' ('''BJT''') is a type of [[transistor]]. It is a three-terminal device constructed of [[Doping (Semiconductors)|doped]] [[semiconductor]] material and may be used in [[Electronic amplifier|amplifying]] or switching applications. ''Bipolar'' transistors are so named because their operation involves both [[electron]]s and [[electron hole|hole]]s, as opposed to ''unipolar transistors,'' such as [[field-effect transistor]]s, in which only one carrier type is involved in charge flow.
* [[Geoff Collinson]], Australian horn player and the Head of Brass at the University of Melbourne
* [[Harry Collinson Owen]] (1882 – 1956), British journalist and author
* [[James Collinson]] (1825 – 1881), Victorian painter who was a member of the Pre-Raphaelite Brotherhood
* [[John Collinson]] (1911 - 1979), English cricketer
* [[Laurence Collinson]] (1925 - 1986), British and Australian playwright, actor, poet, journalist, and secondary school teacher
* [[Madeleine Collinson]] (1952), model and actress; twin of Mary Collinson
* [[Mary Collinson]] (1952), model and actress; twin of Madeleine Collinson
* [[Peter Collinson (botanist)]] (1694 – 1768), Fellow of the Royal Society, an avid gardener
* [[Peter Collinson (film director)]] (1936 – 1980), British film director
* [[Phil Collinson]], British television producer
* [[Richard Collinson]] (1811 – 1883), English naval officer and explorer of the Arctic
* [[Robert Collinson]], cricketer
* [[William Edward Collinson]] (1889 - 1969), British linguist


==Places==
Although a small part of the transistor current is due to the flow of [[majority carrier]]s, most of the transistor current is due to the flow of [[minority carrier]]s and so BJTs are classified as 'minority-carrier' devices.
* [[Cape Collinson]], also Hak Kok Tau (黑角頭), cape located near Ngan Wan between Siu Sai Wan and Big Wave Bay in the east most point of the Hong Kong Island in Hong Kong
* [[Collinson Peninsula]], Nunavut, Canada


==Other uses==
{{float_begin|side=right}}
* [[Collinson Point Provincial Park]], on Galiano Island, British Columbia, Canada
|- align = "center"
| [[Image:BJT PNP symbol (case).svg|60px]] || PNP
|- align = "center"
| [[Image:BJT NPN symbol (case).svg|60px]] || NPN
{{float_end|caption=The schematic<br> symbols for PNP-<br> and NPN-type<br> BJTs.}}


{{Disambig}}
==Introduction==
[[Image:NPN BJT Basic Operation (Active).svg|thumb|500px|NPN BJT with forward-biased E–B junction and reverse-biased B–C junction]]

An NPN transistor can be considered as two [[diode]]s with a shared [[anode]] region. In typical operation, the emitter–base [[p-n junction|junction]] is [[p-n junction#Forward-bias|forward bias]]ed and the base–collector junction is [[p-n junction#Reverse-bias|reverse bias]]ed. In an NPN transistor, for example, when a positive voltage is applied to the base–emitter junction, the equilibrium between thermally generated [[charge carrier|carrier]]s and the repelling electric field of the [[depletion region]] becomes unbalanced, allowing thermally excited electrons to inject into the base region. These electrons wander (or "[[diffusion|diffuse]]") through the base from the region of high concentration near the emitter towards the region of low concentration near the collector. The electrons in the base are called ''[[minority carrier]]s'' because the base is [[Doping (semiconductors)|doped]] p-type which would make holes the ''[[majority carrier]]'' in the base.

The base region of the transistor must be made thin, so that carriers can diffuse across it in much less time than the semiconductor's minority carrier lifetime, to minimize the percentage of carriers that [[Carrier generation and recombination|recombine]] before reaching the collector–base junction. To ensure this, the thickness of the base is much less than the [[Fick's law#Example solution in one dimension: diffusion length|diffusion length]] of the electrons. The collector–base junction is reverse-biased, so little electron injection occurs from the collector to the base, but electrons that diffuse through the base towards the collector are swept into the collector by the electric field in the depletion region of the collector–base junction.

===Voltage, current, and charge control===
The collector–emitter current can be viewed as being controlled by the base–emitter current (current control), or by the base–emitter voltage (voltage control). These views are related by the current–voltage relation of the base–emitter junction, which is just the usual exponential current–voltage curve of a [[p-n junction]] (diode).<ref name=hh>{{cite book | title = The Art of Electronics | author = Winfield Hill and Paul Horowitz | publisher = Cambridge University Press | year = 1989 | isbn = 0521370957 | url = http://books.google.com/books?id=bkOMDgwFA28C&pg=PA113&dq=bjt+charge+current+voltage+control+inauthor:horowitz+inauthor:hill&as_brr=0&ei=A33kRuT6Co3goAKF5pSqCw&sig=EmoHsk3zMEtvV1VYKR65A4I1SCM }}</ref>

The physical explanation for collector current is the amount of minority-carrier charge in the base region.<ref name=hh/><ref>{{cite book | title = Semiconductor Device Physics and Simulation | author = Juin Jei Liou and Jiann S. Yuan | publisher = Springer | year = 1998 | isbn = 0306457245 | url = http://books.google.com/books?id=y343FTN1TU0C&pg=PA166&dq=charge-controlled+bjt+physics&as_brr=0&ei=l9viRqilEIjopQL_i6WFDg&sig=vXciSaFRmNUmg3KIhmBX7DCiVOA }}</ref><ref>{{cite book | title = Transistor Manual | author = General Electric | edition = Sixth ed. | year = 1962 | pages = p.12}} "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by
means of the positive charge (hole concentration) in the base region. ... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in Fourth and Fifth editions)</ref> Detailed models of transistor action, such as the Gummel–Poon model, account for the distribution of this charge explicitly to explain transistor behavior more exactly.<ref>{{cite book | title = Semiconductor Device Modeling with Spice | author = Paolo Antognetti and Giuseppe Massobrio | publisher = McGraw-Hill Professional | year = 1993 | isbn = 0071349553 | url = http://books.google.com/books?id=5IBYU9xrGaIC&pg=PA96&dq=gummel-poon+charge+model&as_brr=3&ei=v4TkRp-4Gp2cowLM7bnCCw&sig=vYrycIhlQKCq7VmoK231pjYXPyU#PPA98,M1 }}</ref> The charge-control view easily handles photo-transistors, where minority carriers in the base region are created by the absorption of [[photon]]s, and handles the dynamics of turn-off, or recovery time, which depends on charge in the base region recombining. However, since base charge is not a signal that is visible at the terminals, the current- and voltage-control views are usually used in circuit design and analysis.

In [[analog circuit]] design, the current-control view is sometimes used since it is approximately linear. That is, the collector current is approximately <math>\beta_F</math> times the base current. Some basic circuits can be designed by assuming that the emitter–base voltage is approximately constant, and that collector current is beta times the base current. However, to accurately and reliably design production BJT circuits, the voltage-control (for example, Ebers–Moll) model is required<ref name=hh/> The voltage-control model requires an exponential function to be taken into account, but when it is linearized such that the transistor can be modelled as a transconductance, as in the Ebers–Moll model, design for circuits such as differential amplifiers again becomes a mostly linear problem, so the voltage-control view is often preferred. For [[translinear circuit]]s, in which the exponential I–V curve is key to the operation, the transistors are usually modelled as voltage controlled with transconductance proportional to collector current. In general, transistor level circuit design is performed using [[SPICE]] or a comparable analogue circuit simulator, so model complexity is usually not of much concern to the designer.

===Transistor 'alpha' and 'beta'===
The proportion of electrons able to cross the base and reach the collector is a measure of the BJT efficiency. The heavy doping of the emitter region and light doping of the base region cause many more electrons to be injected from the emitter into the base than holes to be injected from the base into the emitter. The ''[[common-emitter]] current gain'' is represented by β<sub>F</sub> or h<sub>fe</sub>. It is approximately the ratio of the DC collector current to the DC base current in forward-active region, and is typically greater than 100. Another important parameter is the [[common-base]] current gain, α<sub>F</sub>. The common-base current gain is approximately the gain of current from emitter to collector in the forward-active region. This ratio usually has a value close to unity; between 0.98 and 0.998.
Alpha and beta are more precisely related by the following identities (NPN transistor):

: <math>\alpha_T = \frac{I_\mathrm{C}}{I_\mathrm{E}}</math>
: <math>\beta_F = \frac{I_\mathrm{C}}{I_\mathrm{B}}</math>
: <math>\beta_F = \frac{\alpha_T}{1 - \alpha_T}\iff \alpha_T = \frac{\beta_F}{\beta_F+1}</math>

==Structure==
[[Image:npn BJT cross section.PNG|thumb|left|250px|Simplified cross section of a planar ''NPN'' bipolar junction transistor]]
[[Image:Transistor-die-KSY34.jpg|thumb|right|200px|Die of a KSY34 high-frequency NPN transistor, base and emitter connected via bonded wires]]
A BJT consists of three differently [[Doping (semiconductor)|doped]] semiconductor regions, the ''emitter'' region, the ''base'' region and the ''collector'' region. These regions are, respectively, ''p'' type, ''n'' type and ''p'' type in a [[PNP transistor|PNP]], and ''n'' type, ''p'' type and ''n'' type in a [[NPN transistor]]. Each semiconductor region is connected to a terminal, appropriately labeled: ''emitter'' (E), ''base'' (B) and ''collector'' (C).

The ''base'' is physically located between the ''emitter'' and the ''collector'' and is made from lightly doped, high resistivity material. The collector surrounds the emitter region, making it almost impossible for the electrons injected into the base region to escape being collected, thus making the resulting value of α very close to unity, and so, giving the transistor a large β. A cross section view of a BJT indicates that the collector–base junction has a much larger area than the emitter–base junction.

The bipolar junction transistor, unlike other transistors, is usually not a symmetrical device. This means that interchanging the collector and the emitter makes the transistor leave the forward active mode and start to operate in reverse mode. Because the transistor's internal structure is usually optimized to forward-mode operation, interchanging the collector and the emitter makes the values of α and β in reverse operation much smaller than those found in forward operation; often the α of the reverse mode is lower than 0.5. The lack of symmetry is primarily due to the doping ratios of the emitter and the collector. The emitter is heavily doped, while the collector is lightly doped, allowing a large reverse bias voltage to be applied before the collector–base junction breaks down. The collector–base junction is reverse biased in normal operation. The reason the emitter is heavily doped is to increase the emitter injection efficiency: the ratio of carriers injected by the emitter to those injected by the base. For high current gain, most of the carriers injected into the emitter–base junction must come from the emitter.

The low-performance "lateral" bipolar transistors sometimes used in [[CMOS]] processes are sometimes designed symmetrically, that is, with no difference between forward and backward operation.

Small changes in the voltage applied across the base–emitter terminals causes the current that flows between the ''emitter'' and the ''collector'' to change significantly. This effect can be used to amplify the input voltage or current. BJTs can be thought of as voltage-controlled [[current source]]s, but are more simply characterized as current-controlled current sources, or current amplifiers, due to the low impedance at the base.

Early transistors were made from [[germanium]] but most modern BJTs are made from [[silicon]]. A significant minority are also now made from [[gallium arsenide]], especially for very high speed applications (see HBT, below).

===NPN===
[[Image:BJT NPN symbol (case).svg|thumb|100px|The symbol of an NPN Bipolar Junction Transistor.]]

NPN is one of the two types of bipolar transistors, in which the letters "N" and "P" refer to the majority [[charge carrier]]s inside the different regions of the transistor. Most bipolar transistors used today are NPN, because [[electron mobility]] is higher than [[hole mobility]] in semiconductors, allowing greater currents and faster operation.

NPN transistors consist of a layer of P-[[doped]] semiconductor (the "base") between two N-doped layers. A small current entering the base in common-emitter mode is amplified in the collector output. In other terms, an NPN transistor is "on" when its base is pulled '''high''' relative to the emitter.

The arrow in the NPN transistor symbol is on the emitter leg and points in the direction of the [[conventional current]] flow when the device is in forward active mode.

One [[mnemonic]] device for identifying the symbol for the NPN transistor is "'''n'''ot '''p'''ointing i'''n'''"<ref name=mnem>[http://www.txt.com/ham/03circuits.pdf Lesson 3: Electronics & Circuits – Preparation for Amateur Radio Technician Class Exam] p. 20 (PDF)</ref> or "'''n'''ever '''p'''oints i'''n'''".

===PNP===<!-- This section is linked from [[PNP]] -->

The other type of BJT is the PNP with the letters "P" and "N" referring to the majority [[charge carrier]]s inside the different regions of the transistor.
[[Image:BJT PNP symbol (case).svg|thumb|100px|The symbol of a PNP Bipolar Junction Transistor.]]
PNP transistors consist of a layer of N-[[doped]] semiconductor between two layers of P-doped material. A small current leaving the base in common-emitter mode is amplified in the collector output. In other terms, a PNP transistor is "on" when its base is pulled '''low''' relative to the emitter.

The arrow in the PNP transistor symbol is on the emitter leg and points in the direction of the [[conventional current]] flow when the device is in forward active mode.

One mnemonic device for identifying the symbol for the PNP transistor is "'''p'''oints i'''n''' '''p'''roudly"<ref name=mnem/> or "'''p'''oints i'''n''' '''p'''ermanently".

===Heterojunction bipolar transistor===
[[Image:Pnp Heterostructure Bands.png|thumb|Bands in graded heterojunction npn bipolar transistor. Barriers indicated for electrons to move from emitter to base, and for holes to be injected backward from base to emitter; Also, grading of bandgap in base assists electron transport in base region; Light colors indicate [[depletion region|depleted regions]] ]]
The [[heterojunction bipolar transistor]] ([[HBT]]) is an improvement of the BJT that can handle signals of very high frequencies up to several hundred [[GHz]]. It is common nowadays in ultrafast circuits, mostly RF systems.<ref name=Williams>
{{cite book
|author= D.V. Morgan, Robin H. Williams (Editors)
|title=Physics and Technology of Heterojunction Devices
|year= 1991
|publisher=Institution of Electrical Engineers (Peter Peregrinus Ltd.)
|location=London
|isbn=0863412041
|url=http://books.google.com/books?id=C98iH7UDtzwC&pg=PA210&dq=%22SIGe+heterojunction%22&as_brr=0&sig=6keqSOzQVPjnGn3Ism4CuhX7NHQ#PPA201,M1}}
</ref><ref name=Ashburn>
{{cite book
|author=Peter Ashburn
|title=SiGe Heterojunction Bipolar Transistors
|year= 2003
|pages=Chapter 10
|publisher= Wiley
|location=New York
|isbn=0470848383
|url=http://worldcat.org/isbn/0470848383}}
</ref>
Heterojunction transistors have different semiconductors for the elements of the transistor. Usually the emitter is composed of a larger bandgap material than the base. The figure shows that this difference in bandgap allows the barrier for holes to inject backward into the base, denoted in figure as Δφ<sub>p</sub>, to be made large, while the barrier for electrons to inject into the base Δφ<sub>n</sub> is made low. This barrier arrangement helps reduce minority carrier injection from the base when the emitter-base junction is under forward bias, and thus reduces base current and increases emitter injection efficiency.

The improved injection of carriers into the base allows the base to have a higher doping level, resulting in lower resistance to access the base electrode. In the more traditional BJT, also referred to as homojunction BJT, the efficiency of carrier injection from the emitter to the base is primarily determined by the doping ratio between the emitter and base, which means the base must be lightly doped to obtain high injection efficiency, making its resistance relatively high. In addition, higher doping in the base can improve figures of merit like the [[Early voltage]] by lessening base narrowing.

The grading of composition in the base, for example, by progressively increasing the amount of germanium in a [[SiGe]] transistor, causes a gradient in bandgap in the neutral base, denoted in the figure by Δφ<sub>G</sub>, providing a "built-in" field that assists electron transport across the base. That [[drift transistor|drift component]] of transport aids the normal diffusive transport, increasing the frequency response of the transistor by shortening the transit time across the base.

Two commonly used HBTs are silicon–germanium and aluminum gallium arsenide, though a wide variety of semiconductors may be used for the HBT structure. HBT structures are usually grown by [[epitaxy]] techniques like [[Metalorganic vapour phase epitaxy|MOCVD]] and [[Molecular beam epitaxy|MBE]].

==Transistors in circuits==
[[Image:npn-structure.png|thumb|left|Structure and use of npn transistor]]

The diagram opposite is a schematic representation of an npn transistor connected to two voltage sources. To make the transistor conduct appreciable current (on the order of 1 mA) from C to E, <math>V_{BE}</math> must be above a minimum value sometimes referred to as the '''cut-in voltage'''. The cut-in voltage is usually about 600 mV for silicon BJTs, but can be different depending on the current level selected for the application and the type of transistor. This applied voltage causes the lower p-n junction to 'turn-on' allowing a flow of electrons from the emitter into the base. Because of the electric field existing between base and collector (caused by <math>V_{CE}</math>), the majority of these electrons cross the upper p-n junction into the collector to form the collector current, <math>I_C</math>. The remainder of the electrons recombine with holes, the majority carriers in the base, making a current through the base connection to form the base current, <math>I_B</math> . As shown in the diagram, the emitter current, <math>I_E</math>, is the total transistor current which is the sum of the other terminal currents. That is:

:<math>I_E = I_B + I_C\,</math>

In the diagram, the arrows representing current point in the direction of the electric or [[conventional current]]—the flow of electrons is in the opposite direction of the arrows since electrons carry negative [[electric charge]]. The ratio of the collector current to the base current is called the ''DC current gain''. This gain is usually quite large and is often 100 or more.

It should also be noted that the emitter current is related to <math>V_{BE}</math> exponentially. At room temperature, increasing <math>V_{BE}</math> by about 60 mV increases the emitter current by a factor of 10. The base current is approximately proportional to the emitter current, so it varies the same way.

==Regions of operation==<!-- This section is linked from [[Emitter-coupled logic]] -->

Bipolar transistors have five distinct regions of operation, defined mostly by applied bias:

* '''Forward-active''' (or simply, '''active'''): The emitter-base junction is forward biased and the base-collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, <math>\beta_f</math>, in forward-active mode. If this is the case, the collector-emitter current is approximately [[Proportionality (mathematics)|proportional]] to the base current, but many times larger, for small base current variations.
* '''Reverse-active''' (or '''inverse-active''' or '''inverted'''): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Since most BJTs are designed to maximize current gain in forward-active mode, the <math>\beta_f</math> in inverted mode is several (2 - 3 for the ordinary germanium transistor) times smaller. This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region.
* '''Saturation''': With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch.
* '''Cutoff''': In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current flow, which corresponds to a logical "off", or an open switch.
* '''[[Avalanche breakdown]] region'''
While these regions are well defined for sufficiently large applied voltage, they overlap somewhat for small (less than a few hundred millivolts) biases. For example, in the typical grounded-emitter configuration of an NPN BJT used as a pulldown switch in digital logic, the "off" state never involves a reverse-biased junction because the base voltage never goes below ground; nevertheless the forward bias is close enough to zero that essentially no current flows, so this end of the forward active region can be regarded as the cutoff region.

== History ==
The bipolar (point-contact) transistor was [http://www.computerhistory.org/semiconductor/timeline/1947-invention.html invented in December 1947] at the [[Bell Telephone Laboratories]] by [[John Bardeen]] and [[Walter Brattain]] under the direction of [[William Shockley]]. The junction version, [http://www.computerhistory.org/semiconductor/timeline/1948-conception.html invented by Shockley in 1948], enjoyed three decades as the device of choice in the design of discrete and [[integrated circuits]]. Nowadays, the use of the BJT has declined in favour of [[CMOS]] technology in the design of digital integrated circuits.

===Germanium transistors===
The [[germanium]] transistor was more common in the 1950s and 1960s, and while it exhibits a lower "cut off" voltage, making it more suitable for some applications, it also has a greater tendency to exhibit [[thermal runaway]].

===Early manufacturing techniques===
Various methods of manufacturing bipolar junction transistors were developed<ref>[http://hm-treasury.gov.uk/media/B/C/queen_mary_ip_research_institute_p5_043_762kb.pdf Third case study – the solid state advent] (PDF)</ref>.
* [[Grown junction transistor]] - first type of bipolar junction transistor made<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_M1752.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''BELL LABS TYPE M1752''']</ref>. Invented by [[William Shockley]] at [[Bell Labs]]. Invented on [[June 23]], [[1948]]<ref>{{cite book
| last = Morris
| first = Peter Robin
| title = A History of the World Semiconductor Industry
| series = IEE History of Technology Series 12
| year = 1990
| publisher = Peter Peregrinus Ltd.
| location = London
| isbn = 0 86341 227 0
| pages = p. 29
| chapter = 4.2
}}
</ref>. Patent filed on [[June 26]], [[1948]].
* [[Alloy junction transistor]] - emitter and collector alloy beads fused to base. Developed at [[General Electric]] and [[RCA]]<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_TA153.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''RCA TA153''']</ref> in 1951.
** [[Micro alloy transistor]] - high speed type of alloy junction transistor. Developed at [[Philco]]<ref>{{cite book
| title = High Speed Switching Transistor Handbook
| edition = 2nd edition
| year = 1963
| publisher = Motorola
| pages = p. 17
}}[http://groups.google.vu/group/sci.electronics.components/tree/browse_frm/month/2003-04/c97c04dc783ab61e?rnum=21&_done=%2Fgroup%2Fsci.electronics.components%2Fbrowse_frm%2Fmonth%2F2003-04%3F]</ref>.
** [[Micro alloy diffused transistor]] - high speed type of alloy junction transistor. Developed at [[Philco]].
** [[Post alloy diffused transistor]] - high speed type of alloy junction transistor. Developed at [[Philips]].
* [[Tetrode transistor]] - high speed variant of grown junction transistor<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_3N22.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''WESTERN ELECTRIC 3N22''']</ref> or alloy junction transistor<ref>[http://ieeexplore.ieee.org/iel5/16/31551/01472171.pdf?arnumber=1472171 The Tetrode Power Transistor] PDF</ref> with two connections to base.
* [[Surface barrier transistor]] - high speed metal barrier junction transistor. Developed at [[Philco]]<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_A01.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''PHILCO A01''']</ref> in 1953<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_SurfaceBarrier.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''Surface Barrier Transistor''']</ref>.
* [[Drift-field transistor]] - high speed bipolar junction transistor. Invented by [[Herbert Kroemer]]<ref>[http://ieeexplore.ieee.org/iel5/16/20748/00960370.pdf ''Herb’s Bipolar Transistors'' IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001] PDF</ref><ref>[http://ieeexplore.ieee.org/iel5/16/31630/01474625.pdf?isnumber=&arnumber=1474625 Influence of Mobility and Lifetime Variations on Drift-Field Effects in Silicon-Junction Devices] PDF</ref> at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953.
* [[Diffusion transistor]] - modern type bipolar junction transistor. Prototypes<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_Prototype_DiffusedBase.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''BELL LABS PROTOTYPE DIFFUSED BASE TRIODE''']</ref> developed at Bell Labs in 1954.
** [[Diffused base transistor]] - first implementation of diffusion transistor.
** [[Mesa transistor]] - Developed at [[Texas Instruments]] in 1957.
** [[Planar transistor]] - the bipolar junction transistor that made mass produced monolithic [[integrated circuit]]s possible. Developed by Dr. [[Jean Hoerni]]<ref>[http://semiconductormuseum.com/PhotoGallery/PhotoGallery_2N1613.htm TRANSISTOR MUSEUM Historic Transistor Photo Gallery '''FAIRCHILD 2N1613''']</ref> at [[Fairchild Semiconductor|Fairchild]] in 1959.
* [http://www.computerhistory.org/semiconductor/timeline/1960-Epitaxial.html Epitaxial transistor] - a bipolar junction transistor made using vapor phase deposition. See [[epitaxy]]. Allows very precise control of doping levels and gradients.

==Theory and modeling==
In the discussion below, focus is on the npn bipolar transistor. In the npn transistor in what is called '''active mode''' the base-emitter voltage <math>V_\mathrm{BE}</math> and collector-base voltage <math>V_\mathrm{CB}</math> are positive, forward biasing the emitter-base junction and reverse-biasing the collector-base junction. In active mode of operation, electrons are injected from the forward biased n-type emitter region into the p-type base where they diffuse to the reverse biased n-type collector and are swept away by the electric field in the reverse biased collector-base junction. For a figure describing forward and reverse bias, see the end of the article [[Diode#Semiconductor_diodes|semiconductor diodes]].
===Large-signal models===
====Ebers–Moll model====
The DC emitter and collector currents in active mode are well modeled by an approximation to the Ebers–Moll model:

[[Image:Ebers-Moll Model NPN.PNG|thumb|250px|Ebers-Moll Model for NPN Transistor]]
[[Image:Ebers-Moll Model PNP.PNG|thumb|250px|Ebers-Moll Model for PNP Transistor]]

: <math>I_\mathrm{E} = I_\mathrm{ES} \left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - 1\right)</math>
: <math>I_\mathrm{C} = \alpha_T I_\mathrm{ES} \left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - 1\right)</math>
The base internal current is mainly by diffusion (see [[Fick's law]]) and
: <math>J_n(Base) = \begin{matrix}\frac{q D_n n_{bo}}{W}\end{matrix} e^{\frac{V_{EB}}{V_T}}</math>

Where
* <math>V_\mathrm{T}</math> is the [[Thermal voltage#Role in semiconductor physics| thermal voltage]] <math>\mathrm{kT/q}</math> (approximately 26 mV at 300 K ≈ room temperature).
* <math>I_\mathrm{E}</math> is the emitter current
* <math>I_\mathrm{C}</math> is the collector current
* <math>\alpha_T</math> is the common base forward short circuit current gain (0.98 to 0.998)
* <math>I_\mathrm{ES}</math> is the reverse saturation current of the base–emitter diode (on the order of 10<sup>−15</sup> to 10<sup>−12</sup> amperes)
* <math>V_\mathrm{BE}</math> is the base–emitter voltage
* <math>D_n</math> is the diffusion constant for electrons in the p-type base
* ''W'' is the base width

The collector current is slightly less than the emitter current, since the value of <math>\alpha_T</math> is very close to 1.0. In the BJT a small amount of base–emitter current causes a larger amount of collector–emitter current. The ratio of the allowed collector–emitter current to the base–emitter current is called ''current gain'', β or <math>h_\mathrm{FE}</math>. A β value of 100 is typical for small bipolar transistors. In a typical configuration, a very small signal current flows through the base–emitter junction to control the emitter–collector current. β is related to α through the following relations:

: <math>\alpha_T = \frac{I_\mathrm{C}}{I_\mathrm{E}}</math>
: <math>\beta_F = \frac{I_\mathrm{C}}{I_\mathrm{B}}</math>
: <math>\beta_F = \frac{\alpha_T}{1 - \alpha_T}\iff \alpha_T = \frac{\beta_F}{\beta_F+1}</math>

Emitter Efficiency : <math>\eta = \frac{J_n(Base)}{J_E}</math>; that is, the ratio of current injected into the base to the current in the emitter; the two differ due to backward injection from the base into the emitter and to recombination. See [[carrier generation and recombination]].

The unapproximated Ebers-Moll equations used to describe the three currents in any operating region are given below. These equations are based on the transport model for a bipolar junction transistor. See, for example, Sedra and Smith. <ref name=Sedra>
{{cite book
|author=A.S. Sedra and K.C. Smith
|title=Microelectronic Circuits
|year= 2004
|edition=Fifth Edition
|publisher=Oxford
|location=New York
|isbn=0-19-514251-9
|pages=Eqs. 4.103-4.110, p. 305
|url=http://worldcat.org/isbn/0195142519}}
</ref>

:<math> i_\mathrm{C} = I_\mathrm{S}\left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - e^{\frac{V_\mathrm{BC}}{V_\mathrm{T}}}\right) - \frac{I_\mathrm{S}}{\beta_\mathrm{R}}\left(e^{\frac{V_\mathrm{BC}}{V_\mathrm{T}}} - 1\right)</math>

:<math> i_\mathrm{B} = \frac{I_\mathrm{S}}{\beta_\mathrm{F}}\left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - 1\right) + \frac{I_\mathrm{S}}{\beta_\mathrm{R}}\left(e^{\frac{V_\mathrm{BC}}{V_\mathrm{T}}} - 1\right)</math>

:<math> i_\mathrm{E} = I_\mathrm{S}\left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - e^{\frac{V_\mathrm{BC}}{V_\mathrm{T}}}\right) + \frac{I_\mathrm{S}}{\beta_\mathrm{F}}\left(e^{\frac{V_\mathrm{BE}}{V_\mathrm{T}}} - 1\right)</math>

where
* <math>i_\mathrm{C}</math> is the collector current
* <math>i_\mathrm{B}</math> is the base current
* <math>i_\mathrm{E}</math> is the emitter current
* <math>\beta_\mathrm{F}</math> is the forward common emitter current gain (20 to 500)
* <math>\beta_\mathrm{R}</math> is the reverse common emitter current gain (0 to 20)
* <math>I_\mathrm{S}</math> is the reverse saturation current (on the order of 10<sup>−15</sup> to 10<sup>−12</sup> amperes)
* <math>V_\mathrm{T}</math> is the [[Thermal voltage#Role in semiconductor physics|thermal voltage]] (approximately 26 mV at 300 K ≈ room temperature).
* <math>V_\mathrm{BE}</math> is the base–emitter voltage
* <math>V_\mathrm{BC}</math> is the base–collector voltage

=====Base-width modulation=====
[[Image:Pnp Base Narrowing.png|thumb|300px| Top: pnp base width for low collector-base reverse bias; Bottom: narrower pnp base width for large collector-base reverse bias. Light colors are [[depletion width|depleted regions]].]]

{{main|Early Effect}}

As the applied collector–base voltage (<math>V_{BC}</math>) varies, the collector–base depletion region varies in size. An increase in the collector–base voltage, for example, causes a greater reverse bias across the collector–base junction, increasing the collector–base depletion region width, and decreasing the width of the base. This variation in base width often is called the "[[Early effect]]" after its discoverer [[James M. Early]].

Narrowing of the base width has two consequences:

*There is a lesser chance for recombination within the "smaller" base region.
*The charge gradient is increased across the base, and consequently, the current of minority carriers injected across the emitter junction increases.

Both factors increase the collector or "output" current of the transistor in response to an increase in the collector–base voltage.

In the [[bipolar junction transistor#Regions of operation | forward active region]] the Early effect modifies the collector current (<math>i_\mathrm{C}</math>) and the forward common emitter current gain (<math>\beta_\mathrm{F}</math>) as given by the following equations:{{Fact|date=November 2007}}

: <math> i_\mathrm{C} = I_\mathrm{S} e^{\frac{v_\mathrm{BE}}{V_\mathrm{T}}} \left(1 + \frac{V_\mathrm{CB}}{V_\mathrm{A}}\right)</math>

: <math> \beta_\mathrm{F} = \beta_\mathrm{F0}\left(1 + \frac{V_\mathrm{CB}}{V_\mathrm{A}}\right)</math>

Where
:* <math>V_\mathrm{CB}</math> is the collector–base voltage
:* <math>V_\mathrm{A}</math> is the Early voltage (15 V to 150 V)
:* <math>\beta_\mathrm{F0}</math> is forward common-emitter current gain when <math>V_{CB}</math> = 0 V

=====Current–voltage characteristics=====

The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT<ref name=Muller>
{{cite book
|author=R S Muller, Kamins TI & Chan M
|title=Device electronics for integrated circuits
|page=pp. 280 ff
|publisher= Wiley
|location=New York
|year=2003
|edition=Third Edition
|isbn=0-471-59398-2
|url=http://worldcat.org/isbn/0-471-59398-2}}
</ref>

*Low level injection
*Uniform doping in each region with abrupt junctions
*One-dimensional current flow
*Negligible recombination-generation in space charge regions
*Negligible electric fields outside of space charge regions.

It is important to characterize the minority diffusion currents induced by injection of carriers.

With regard to pn junction diode, a key relation is the diffusion equation.

:<math>\frac{d^2 \Delta p_B (x)}{dx^2} = \frac{\Delta p_B (x)}{L_B^2}</math>

A solution of this equation is below, and two boundary conditions are used to solve and find <math>C_1</math> and <math>C_2</math>.

:<math>\Delta p_B (x) = C_1 e^{x/L_B} + C_2 e^{-x/L_B}</math>

The following equations apply to the emitter and collector region, respectively, and the origins <math>0</math>, <math>0'</math>, and <math>0''</math> apply to the base, collector, and emitter.

:<math>\Delta n_B (x'') = A_1 e^{x''/L_B} + A_2 e^{-x''/L_B}</math>

:<math>\Delta n_c (x') = B_1 e^{x'/L_B} + B_2 e^{-x'/L_B}</math>

A boundary condition of the emitter is below:

:<math>\Delta n_E (0'') = n_{EO} ( \exp (q V_{EB} / kT) - 1)\;</math>

The values of the constants <math>A_1</math> and <math>B_1</math> are zero due to the following conditions of the emitter and collector regions as <math>x'' \rightarrow 0</math> and <math>x' \rightarrow 0</math>.

:<math>\Delta n_E (x'') \rightarrow 0</math>

:<math>\Delta n_c (x') \rightarrow 0</math>

Since <math>A_1 = B_1 = 0</math>, the values of <math>\Delta n_E (0'')</math> and <math>\Delta n_c (0')</math> are <math>A_2</math> and <math>B_2</math>, respectively.

:<math>\Delta n_E (x'') = n_{E0} (\exp (q V_{EB} / kT) - 1) \exp(-x''/L_E)\;</math>

:<math>\Delta n_C (x') = n_{C0} (\exp (q V_{CB} / kT) - 1) \exp(-x'/L_C)\;</math>

Expressions of <math>I_{En}</math> and <math>I_{Cn}</math> can be evaluated.

:<math>I_{En} = - q A D_E \frac{d \Delta_E (x'')}{dx} |_{x''=0''}</math>

:<math>I_{Cn} = -q A \frac{D_C}{L_C} n_{C0} ( \exp ( q V_{CB} / kT) - 1)</math>

Since insignificant recombination occurs, the second derivative of <math>\Delta p_B (x)</math> is zero. There is therefore a linear relationship between excess hole density and <math>x</math>.

:<math>\Delta p_B (x) = D_1 x + D_2\;</math>

The following are boundary conditions of <math>\Delta p_B</math>.

:<math>\Delta p_B (0) = D_2\;</math>

:<math>\Delta p_B (W) = D_1 W + \Delta p_B (0)\;</math>

Substitute into the above linear relation.

:<math>\Delta p_B (x) = - \left ( \frac{ \Delta p_B (0) - \Delta p_B (W) }{W} \right ) x + \Delta p_B (0)</math>.

With this result, derive value of <math>I_{Ep}</math>.

:<math>I_{Ep} (0) = - q A D_B \frac{d \Delta p_B}{dx}|_{x=0}</math>

:<math>I_{Ep} (0) = \frac{q A D_B}{W} \left ( \Delta p_B (0) - \Delta p_B (W) \right )</math>

Use the expressions of <math>I_{Ep}</math>, <math>I_{En}</math>, <math>\Delta p_B(0)</math>, and <math>\Delta p_B(W)</math> to develop an expression of the emitter current.

:<math>\Delta p_B(W) = p_{B0} \exp ( q V_{CB}/kT)\;</math>

:<math>\Delta p_B(0) = p_{B0} \exp ( q V_{EB}/kT))\;</math>

:<math>I_E = qA \left ( \left ( \frac{D_E n_{E0}}{L_E} + \frac{D_B p_{B0}}{W} \right ) \left ( \exp \left ( \frac{q V_{EB}}{kT} \right ) - 1 \right ) - \left ( \frac{D_B}{W} p_{B0} \right ) \left ( \exp \left ( \frac {q V_{CB}}{k T} \right ) - 1 \right ) \right )</math>

Similarly, an expression of the collector current is derived.

:<math>I_{Cp} (W) = I_{Ep} (0)\;</math>

:<math>I_C = I_{Cp} (W) + I_{Cn} (0')\;</math>

:<math>I_C = q A \left ( \left ( \frac{D_B}{W} p_{B0} \right ) ( \exp (q V_{EB} / kT ) -1 ) - \left ( \frac{ D_C n_{C0} }{ L_C } + \frac{ D_B p_{B0} }{ W } \right ) ( \exp (q V_{CB} / kT ) -1 ) \right )</math>

An expression of the base current is found with the previous results.

:<math>I_B = I_E - I_C\;</math>

:<math>I_B = q A \left ( \frac{D_E}{L_E} n_{E0} ( \exp ( q V_{EB} / kT ) - 1) + \frac{D_C}{L_C} n_{C0} ( \exp ( q V_{CB} / k T ) - 1 ) \right )</math>

=====Punchthrough=====
When the base–collector voltage reaches a certain (device specific) value, the base–collector depletion region boundary meets the base–emitter depletion region boundary. When in this state the transistor effectively has no base. The device thus loses all gain when in this state.

====Gummel–Poon charge-control model====
The [[Gummel–Poon model]]<ref>H. K. Gummel and R. C. Poon, "An integral charge control model of bipolar transistors," ''Bell Syst. Tech. J.'', vol. 49, pp. 827--852, May-June 1970</ref> is a detailed charge-controlled model of BJT dynamics, which has been adopted and elaborated by others to explain transistor dynamics in greater detail than the terminal-based models typically do [http://ece-www.colorado.edu/~bart/book/book/chapter5/ch5_6.htm#5_6_2]. This model also includes the dependence of transistor <math>\beta</math>-values upon the dc current levels in the transistor, which are assumed current-independent in the Ebers-Moll model.See, for example, Sedra and Smith. <ref name=Sedra2>
{{cite book
|author=A.S. Sedra and K.C. Smith
|title=Microelectronic Circuits
|year= 2004
|edition=Fifth Edition
|publisher=Oxford
|location=New York
|isbn=0-19-514251-9
|pages=p. 509
|url=http://worldcat.org/isbn/0195142519}}
</ref>

===Small-signal models===
====h-parameter model====
[[Image:H-parameters.gif|thumb|300px|Generalized h-parameter model of an NPN BJT.<br>''replace '''x''' with '''e''', '''b''' or '''c''' for CE, CB and CC topologies respectively.'']]

Another model commonly used to analyse BJT circuits is the "[[two-port network#h-parameters (hybrid parameters) |h-parameter]]" model, closely related to the [[hybrid-pi model]] and the [[admittance parameters|y-parameter]] [[two-port network#Y-parameters (admittance parameters) |two-port]], but using input current and output voltage as independent variables, rather than input and output voltages. This two-port network is particularly suited to BJTs as it lends itself easily to the analysis of circuit behaviour, and may be used to develop further accurate models. As shown, the term ''"x"'' in the model represents the BJT lead depending on the topology used. For common-emitter mode the various symbols take on the specific values as &ndash;
*x = 'e' since it is a common-emitter topology
*Terminal 1 = Base
*Terminal 2 = Collector
*Terminal 3 = Emitter
*''i''<sub>in</sub> = Base current (''i''<sub>b</sub>)
*''i''<sub>o</sub> = Collector current (''i''<sub>c</sub>)
*''V''<sub>in</sub> = Base-to-emitter voltage (''V''<sub>BE</sub>)
*''V''<sub>o</sub> = Collector-to-emitter voltage (''V''<sub>CE</sub>)
and the h-parameters are given by &ndash;
*''h''<sub>ix</sub> = ''h''<sub>ie</sub> - The input impedance of the transistor (corresponding to the emitter resistance ''r''<sub>e</sub>).
*''h''<sub>rx</sub> = ''h''<sub>re</sub> - Represents the dependence of the transistor's ''I''<sub>B</sub>&ndash;''V''<sub>BE</sub> curve on the value of ''V''<sub>CE</sub>. It is usually very small and is often neglected (assumed to be zero).
*''h''<sub>fx</sub> = ''h''<sub>fe</sub> - The current-gain of the transistor. This parameter is often specified as ''h''<sub>FE</sub> or the DC current-gain (''β''<sub>DC</sub>) in datasheets.
*''h''<sub>ox</sub> = ''h''<sub>oe</sub> - The output impedance of transistor. This term is usually specified as an admittance and has to be inverted to convert it to an impedance.

As shown, the h-parameters have lower-case subscripts and hence signify AC conditions or analyses. For DC conditions they are specified in upper-case. For the CE topology, an approximate h-parameter model is commonly used which further simplifies the circuit analysis. For this the ''h''<sub>oe</sub> and ''h''<sub>re</sub> parameters are neglected (that is, they are set to infinity and zero, respectively). It should also be noted that the h-parameter model as shown is suited to low-frequency, small-signal analysis. For high-frequency analyses the inter-electrode capacitances that are important at high frequencies must be added.

==Applications==
The BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high [[transconductance]] and output resistance compared to [[MOSFET]]s. The BJT is also the choice for demanding analog circuits, especially for [[very-high-frequency]] applications, such as [[radio-frequency]] circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a [[BiCMOS]] process to create innovative circuits that take advantage of the best characteristics of both types of transistor.

===Temperature sensors===
Because of the known temperature and current dependence of the forward-biased base–emitter junction voltage, the BJT can be used to measure temperature by subtracting two voltages at two different bias currents in a known ratio [http://www.maxim-ic.com/appnotes.cfm/appnote_number/689].

===Logarithmic converters===
Since base–emitter voltage varies as the log of the base–emitter and collector–emitter currents, a BJT can also be used to compute [[logarithm]]s and anti-logarithms. A diode can also perform these nonlinear functions, but the transistor provides more circuit flexibility.

==Vulnerabilities==
Exposure of the transistor to [[ionizing radiation]] causes [[radiation hardening|radiation damage]]. Radiation causes a buildup of 'defects' in the base region that act as [[Carrier generation and recombination|recombination centers]]. The resulting reduction in minority carrier lifetime causes gradual loss of gain of the transistor. Power BJTs are subject to a failure mode called [[secondary breakdown]]. In this failure mode, certain parts of the die (the actual piece of silicon inside the device) get hotter than the others. As a result, the hottest part of the die conducts the most current, causing it to become progressively hotter until the device fails internally.

==See also==
{{portalpar|Electronics|Nuvola_apps_ksim.png}}

* [[Bipolar transistor biasing]]
* [[Hybrid-pi model]]
* [[Transistor models]]
* [[Technology CAD]] (TCAD)


{{Transistor amplifiers}}

==References==
{{reflist}}

==External links==
{{Commonscat|BJT|Bipolar junction transistor}}
* [http://www.faqs.org/docs/electric/Semi/SEMI_4.html Lessons In Electric Circuits - Bipolar Junction Transistors] (Note: this site shows current as a flow of electrons, rather than the [[conventional current|convention of showing it as a flow of holes]], so the arrows may appear the other way around)
* [http://encyclobeamia.solarbotics.net/articles/bip_junct_trans.html EncycloBEAMia - Bipolar Junction Transistor]
* [http://www.st-and.ac.uk/~www_pa/Scots_Guide/info/comp/active/BiPolar/bpcur.html Characteristic curves]
* [http://www.play-hookey.com/semiconductors/transistor.html The transistor] at play-hookey.com
* [http://amasci.com/amateur/transis.html How Do Transistors Work?] by William Beaty
* [http://ux.brookdalecc.edu/fac/engtech/andy/engi242/bjt_models.pdf ENGI 242/ELEC 222: BJT Small Signal Models]
* [http://semiconductormuseum.com/HistoricTransistorTimeline_Index.htm TRANSISTOR MUSEUM Historic Transistor Timeline]
* [http://www.tedpavlic.com/teaching/osu/ece327/lab1_bjt/lab1_bjt_transistor_basics.pdf ECE 327: Transistor Basics] &mdash; Summarizes simple Ebers-Moll model of a bipolar transistor and gives several common BJT circuits.
* [http://www.tedpavlic.com/teaching/osu/ece327/lab7_proj/lab7_proj_procedure.pdf ECE 327: Procedures for Output Filtering Lab] &mdash; Section 4 ("Power Amplifier") discusses design of a BJT-Sziklai-pair-based class-AB current driver in detail.

[[Category:Transistor types]]

[[ar:ترانزستور ثنائي القطب]]
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[[bg:Биполярен транзистор]]
[[ca:Transistor bipolar]]
[[da:Bipolar transistor]]
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[[es:Transistor de unión bipolar]]
[[fa:ترانزیستور دوقطبی پیوندی]]
[[fr:Transistor bipolaire]]
[[ko:접합형 트랜지스터]]
[[id:Transistor bipolar]]
[[it:Transistor a giunzione bipolare]]
[[lv:Bipolārais tranzistors]]
[[nl:Bipolaire transistor]]
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[[pl:Tranzystor bipolarny]]
[[pt:Transistor de junção bipolar]]
[[ro:Tranzistor bipolar]]
[[ru:Биполярный транзистор]]
[[sl:Bipolarni tranzistor]]
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[[sh:Bipolarni tranzistor]]
[[sv:Bipolär transistor]]
[[vi:BJT]]
[[uk:Біполярний транзистор]]
[[zh:双极性晶体管]]

Revision as of 05:52, 11 October 2008

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