JJ Ebers Award
The JJ Ebers Award of the IEEE (IEEE Electron Devices Society) is awarded for progress in electronic devices each year since 1971. It is endowed with $ 5,000, is awarded at the International Electron Devices Meeting and is named after Jewell James Ebers .
Award winners
With laudation (if meaningful)
- 1971 John L. Moll for outstanding technical contributions to electronic components
- 1972 Charles W. Mueller for outstanding technical contributions in electronic components that span the development of modern electronics from tubes, transistors, thyristors, MOS components to silicon vidicons.
- 1973 Herbert Kroemer
- 1974 Andrew S. Grove
- 1975 Jacques I. Pankove
- 1976 Marion E. Hines
- 1977 Anthony E. Siegman
- 1978 Hung C. Lin
- 1979 James M. Early
- 1980 James D. Meindl for pioneering research and teaching in microelectronics
- 1981 Chih-Tang Sah
- 1982 Arthur G. Milnes for contributions to research and teaching on heterojunctions and the physics of components with many impurities (deep impurity)
- 1983 Adolf Goetzberger for pioneering contributions to the fundamental understanding of silicon junctions and the physics of interfaces in components
- 1984 Izuo Hayashi for demonstration and understanding of continuous room temperature heterojunction lasers
- 1985 Walter F. Kosonocky for pioneering contributions and innovations in the development of CCD and Schottky barrier infrared sensors
- 1986 Pallab K. Chatterjee for outstanding technical contributions to electronic components
- 1987 Robert W. Dutton for contributions in the field of modeling and simulation of IC processes, components and circuits.
- 1988 Al F. Tasch Jr. for outstanding contributions to the development of silicon ICs.
- 1989 Tak H. Ning for outstanding contributions to the understanding of the effect of hot electrons in MOSFET devices and the development of advanced bipolar technology
- 1990 Yoshiyuki Takeishi for key innovations in memory technology, contributions to understanding the physics of MOS devices and technical leadership in VLSI technology
- 1991 Simon M. Sze for fundamental and pioneering contributions and as the author of widely used textbooks on semiconductor electronics
- 1992 Louis C. Parrillo and Richard S. Payne for engineering services in process architecture and component design at Twin-Tub CMOS IC Technology, contributions to bipolar technology and advances in its commercial applications
- 1993 Karl Hess for essential contributions to electron transport in semiconductors and in quantum well heterostructures at high energies
- 1994 Alfred U. Macrae for contributions and leadership in ion implantation and VLSI CMOS
- 1995 Martin A. Green for his leadership role in solar cells and silicon photovoltaics
- 1996 Tetsushi Sakai for pioneering research on high speed bipolar ICs
- 1997 Marvin H. White for pioneering contributions to the development of highly sensitive solid-state cameras and imagers that have found widespread commercial use and for his contributions to the development of semiconductor components
- 1998 B. Jayant Baliga for fundamental and sustainable contributions to power electronics with semiconductors
- 1999 James T. Clemens for fundamental contributions to MOS VLSI electronics
- 2000 Bernard S. Meyerson for making significant contributions to the growth of Si / Ge heterostructures and his leadership role in their application to ICs in telecommunications
- 2001 Hiroshi Iwai for leadership role and contributions in continuous scaling of CMOS components
- 2002 Lester F. Eastman for contributions and leadership roles in radio frequency hetero-transistors
- 2003 James D. Plummer for contributions to new components in power memory and logic and fundamental contributions to process modeling
- 2004 Jerry G. Fossum for outstanding contributions to SOI-CMOS devices and circuits through modeling
- 2005 Bijan Davari for the development of deep sumicron CMOS technology and application in the IC industry
- 2006 Ghavam Shahidi for contributions to silicon-on-isolator CMOS technology
- 2007 Stephen J. Pearton for developing advanced compound semiconductor process technologies and clarifying the role of defects and impurities in compound semiconductors
- 2008 Mark R. Pinto for contributions to widely used semiconductor technology simulation tools
- 2009 Baruch Levush for contributions to the development of widely used simulation tools in vacuum electronics
- 2010 Mark E. Law for contributions to widely used silicon IC process modeling
- 2011 Stuart Ross Wenham for contributions to and successful commercialization of high efficiency solar cells
- 2012 Yuan Taur for contributions to several generations of CMOS process technology
- 2013 Nobukazu Teranishi for the development of the pinned photodiode
- 2014 Joachim N. Burghartz for contributions to integrated spiral inductors (coils) for ICs in wireless communication and ultra-thin silicon components for future flexible electronics.
- 2015 Jack Yuan-Chen Sun for leadership role and contributions to energy efficient CMOS technology.
- 2016 Jaroslav Hynecek for pioneering work in CCD and CMOS image sensor technology.
- 2017 Kang L. Wang for contributions and leadership in strained Si / Ge and magnetic storage
- 2018 Michael Shur for pioneering work on ballistic transport in nano semiconductor components
- 2019 H.-S. Philip Wong for pioneering the scaling of electronic components