Suhl effect
The Suhl effect or magneto concentration is an effect of solid state physics . It is named after the German-American physicist Harry Suhl (* 1922), who first described this effect in 1949 at the Bell Telephone Laboratories in Murray Hill (New Jersey) together with the American physicist and later Nobel Prize winner William Bradford Shockley .
description
The effect describes the change in electrical conductivity on the surface of a semiconductor due to an applied magnetic field . If, for example, a strong magnetic field is applied to an n-conducting semiconductor filament (a thin thread), the holes made in the filament are deflected towards the surface. In this area of increased recombination with electrons, they have a shorter lifespan, as a result of which the charge carrier density is reduced and the electrical conductivity in this area decreases. Alternatively, they can also be removed by a probe, which increases the conductance again. The Suhl effect can therefore be used to investigate the recombination properties of a semiconductor.
Individual evidence
- ^ Harry Suhl, William B. Shockley: Concentrating Holes and Electrons by Magnetic Fields . In: Physical Review . tape 75 , no. 10 , 1949, ISSN 0031-9007 , pp. 1617-1619 , doi : 10.1103 / PhysRev . 75.1617 .
- ^ Harry Suhl, William B. Shockley: Concentration of Holes and Electrons by Magnetic Fields . In: Physical Review . tape 76 , 1949, ISSN 0031-9007 , pp. 180 , doi : 10.1103 / PhysRev.76.160 ( Proceedings of the American Physical Society , Minutes of the Meeting at Washington, April 28-30, 1949).
- ↑ Sabrie Soloman: Sensors Handbook . 2nd Edition. McGraw-Hill Professional , 2009, ISBN 978-0-07-160570-0 , pp. 1012 .
- ^ Rudolf F. Graf: Modern Dictionary of Electronics . 7th edition. Newnes (Butterworth-Heinemann), 1999, ISBN 978-0-7506-9866-5 .