Velocity overshoot
Velocity overshoot is a phenomenon in semiconductor physics that occurs when charge carriers in a semiconductor are exposed toan external electric field . Then the charge carriers are accelerated very strongly with the onset of the electric field until scattering processes slow them down on the one hand and broaden their speed distribution on the other. As a result, the electrons briefly reach a higher speed than in the equilibrium state.
literature
- Peter Graf: Development of a Monte Carlo component simulator for Si / SiGe heterobipolar transistors . Herbert Utz Verlag 1999, ISBN 978-3896755742 , p. 79 ff.
Individual evidence
- ↑ Andreas Schenk: Semiconductor components. physical basics and simulation . Ed .: ETH Zurich, Integrated Systems Laboratory. 2001, doi : 10.3929 / ethz-a-004303105 (teaching material).