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Over the course of his career, Reedy has been listed as an inventor on dozens of patents.<ref>{{cite web|title=Results of Search in US Patent Collection db for: Reedy-Ronald-E|url=http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=0&f=S&l=50&d=PTXT&Query=Reedy-Ronald-E|work=US Patent & Trademark Office, Patent Full Text and Image Database|accessdate=13 November 2013}}</ref> Many of those patents are related to advancements in [[silicon on insulator]], [[silicon on sapphire]] and [[CMOS]].
Over the course of his career, Reedy has been listed as an inventor on dozens of patents.<ref>{{cite web|title=Results of Search in US Patent Collection db for: Reedy-Ronald-E|url=http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=0&f=S&l=50&d=PTXT&Query=Reedy-Ronald-E|work=US Patent & Trademark Office, Patent Full Text and Image Database|accessdate=13 November 2013}}</ref> Many of those patents are related to advancements in [[silicon on insulator]], [[silicon on sapphire]] and [[CMOS]].


== Awards and Recognition ==
== Awards and recognition ==


In 2011, Reedy and co-founder Mark Burgener were awarded the [[IEEE Daniel E. Noble Award]] for Emerging Technologies for their contribution<ref>{{cite web|title=Mark L. Burgener and Ronald E. Reedy, Champions of Sapphire Intergrated Circuit Technology, to Receive 2011 IEEE Daniel E. Noble Award for Emerging Technologies|url=http://www.ieee.org/about/news/2011/23may_2011.html|work=IEEE News Release|accessdate=10 February 2014}}</ref>"to make silicon on sapphire (SOS) technology commercially feasible for wireless communications."<ref name=IEEE>{{cite web|title=IEEE Daniel E. Noble Award for Emerging Technologies Recipients|url=http://www.ieee.org/about/awards/bios/noble_recipients.html|work=IEEE website|accessdate=13 November 2013}}</ref> The IEEE Noble award is presented annually to individuals who made a significant contribution to emerging technologies.<ref>{{cite news|last=Blyler|first=John|title=Noble Award Honors Low-Power RF Technology|url=http://chipdesignmag.com/display.php?articleId=4977|accessdate=28 January 2014|newspaper=Chip Design|date=Summer 2011}}</ref><ref>{{cite news|title=Peregrine’s co-founders to receive IEEE award for Emerging Technologies|url=http://www.semiconductor-today.com/news_items/2011/MAY/PEREGRINE_310511.html|accessdate=10 February 2014|newspaper=Semiconductor Today|date=31 May 2011}}</ref>
In 2011, Reedy and co-founder Mark Burgener were awarded the [[IEEE Daniel E. Noble Award]] for Emerging Technologies for their contribution<ref>{{cite web|title=Mark L. Burgener and Ronald E. Reedy, Champions of Sapphire Intergrated Circuit Technology, to Receive 2011 IEEE Daniel E. Noble Award for Emerging Technologies|url=http://www.ieee.org/about/news/2011/23may_2011.html|work=IEEE News Release|accessdate=10 February 2014}}</ref>"to make silicon on sapphire (SOS) technology commercially feasible for wireless communications."<ref name=IEEE>{{cite web|title=IEEE Daniel E. Noble Award for Emerging Technologies Recipients|url=http://www.ieee.org/about/awards/bios/noble_recipients.html|work=IEEE website|accessdate=13 November 2013}}</ref> The IEEE Noble award is presented annually to individuals who made a significant contribution to emerging technologies.<ref>{{cite news|last=Blyler|first=John|title=Noble Award Honors Low-Power RF Technology|url=http://chipdesignmag.com/display.php?articleId=4977|accessdate=28 January 2014|newspaper=Chip Design|date=Summer 2011}}</ref><ref>{{cite news|title=Peregrine’s co-founders to receive IEEE award for Emerging Technologies|url=http://www.semiconductor-today.com/news_items/2011/MAY/PEREGRINE_310511.html|accessdate=10 February 2014|newspaper=Semiconductor Today|date=31 May 2011}}</ref>
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== External links==
== External links==
*[http://www.youtube.com/watch?v=t0bO5g_s07E UCSD Gordon Center] Ron Reedy speaking at the Gordon Engineering Leadership Forum
*[http://www.youtube.com/watch?v=t0bO5g_s07E UCSD Gordon Center] Ron Reedy speaking at the Gordon Engineering Leadership Forum

{{Improve categories|date=March 2014}}


{{Persondata
{{Persondata
| NAME =Reedy
| NAME = Reedy, Ron
| ALTERNATIVE NAMES =
| ALTERNATIVE NAMES =
| SHORT DESCRIPTION = scientist and researcher
| SHORT DESCRIPTION = American scientist and researcher
| DATE OF BIRTH = ,
| DATE OF BIRTH =
| PLACE OF BIRTH = [[Long Island, NY]]
| PLACE OF BIRTH = [[Long Island, NY]]
| DATE OF DEATH =
| DATE OF DEATH =
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[[Category:Year of birth missing (living people)]]
[[Category:Year of birth missing (living people)]]
[[Category:Living people]]
[[Category:Living people]]
[[Category:American electrical engineers]]
[[Category:United States Naval Academy alumni]]
[[Category:University of California, San Diego alumni]]

Revision as of 01:19, 20 March 2014

Ron Reedy, Ph.D.
Born
Ronald E. Reedy

NationalityUnited States United States
EducationUC San Diego
US Naval Academy
Occupation(s)Technology executive
Electrical Engineer
Entrepreneur
Known forPeregrine Semiconductor
Silicon on sapphire
SpouseRobin Reedy

Ronald "Ron" Reedy, Ph.D. is an American businessman, scientist and researcher. He is most notably recognized for his work in the semiconductor industry where he advanced silicon on sapphire (SOS) and CMOS technology.[1][2]

Education

In 1969, Reedy graduated from the US Naval Academy in Annapolis with a BSEE. He then earned a MSEE degree from US Naval Postgraduate School in Monterey. In 1983, he received his Ph.D. in EE & Applied Physics from UC San Diego.[3][4]

Career

Reedy began his career at the NOSC (US Naval Ocean Systems Center) where he worked on silicon CMOS processing. In 1988, Reedy along with NOSC colleagues Mark Burgener and Graham Garcia published a research paper in IEEE Electron Device Letters that proved that SOS films thinned to 100 nm were suitable for application to high-performance down-scaled CMOS circuitry.[5] It was with this advancement that Reedy decided to commercialize the technology. Their research findings were instrumental to the industry and have since been cited in 13 IEEE research papers and 58 patents.[6]

In 1990, Reedy co-founded Peregrine Semiconductor to commercialize the advanced technology. Peregrine became a fabless chip designer[7] that is now publicly traded on the NASDAQ.[8][9] Reedy served as the company's founding CEO and now is the company's CTO.[10]

Reedy sits on the Council of Advisors for UCSD’s Jacobs School of Engineering and its Gordon Leadership Center.[2][11]

Over the course of his career, Reedy has been listed as an inventor on dozens of patents.[12] Many of those patents are related to advancements in silicon on insulator, silicon on sapphire and CMOS.

Awards and recognition

In 2011, Reedy and co-founder Mark Burgener were awarded the IEEE Daniel E. Noble Award for Emerging Technologies for their contribution[13]"to make silicon on sapphire (SOS) technology commercially feasible for wireless communications."[14] The IEEE Noble award is presented annually to individuals who made a significant contribution to emerging technologies.[15][16]

See also

References

  1. ^ Love, Janine (May 31, 2011). "What's up with silicon on sapphire?". EE Times. Retrieved 25 January 2014.
  2. ^ a b Stephens, AnnaMaria. "Sapphire and Silicon". Triton. Retrieved 13 November 2013.
  3. ^ "Perfecting RF CMOS: How Peregrine Pioneered RF SOI". San Diego IEEE Website. Retrieved 10 February 2014.
  4. ^ "Gordon Engineering Leadership Forum - Ronald Reedy". Gordon Center UCSD YouTube Channel. Gordon Center UCSD. Retrieved 10 February 2014.
  5. ^ Burgener, Graham (1988). "High-quality CMOS in thin (100 nm) silicon on sapphire". IEEE Electron Device Letters. 9 (1): 32–34. Bibcode:1988IEDL....9...32G. doi:10.1109/55.20404. Retrieved 14 November 2013. {{cite journal}}: Unknown parameter |coauthors= ignored (|author= suggested) (help); Unknown parameter |month= ignored (help)
  6. ^ "High-quality CMOS in thin (100 nm) silicon on sapphire Cited By". IEEE Xplore. Retrieved 14 November 2013.
  7. ^ Bigelow, Bruce (Nov. 22, 2010). "Peregrine Semiconductor Files for IPO". Xconomy. Retrieved 13 November 2013. {{cite news}}: Check date values in: |date= (help)
  8. ^ "Peregrine Semiconductor Corp. Real Time Stock Quotes". NASDAQ. Retrieved 13 November 2013.
  9. ^ Bigelow, Bruce (August 7, 2012). "After Persevering for 22 Years, Peregrine Semiconductor Marks IPO". Retrieved 13 November 2013.
  10. ^ Gokey, Malarie (Oct. 16, 2013). "Mobile.Pro Exclusive: Peregrine's Ron Reedy Talks Radio Chips and Smartphones". Mobile.Pro. Retrieved 14 November 2013. {{cite news}}: Check date values in: |date= (help)
  11. ^ "Council of Advisors". UCSD Jacobs School of Engineering. Retrieved 13 November 2013.
  12. ^ "Results of Search in US Patent Collection db for: Reedy-Ronald-E". US Patent & Trademark Office, Patent Full Text and Image Database. Retrieved 13 November 2013.
  13. ^ "Mark L. Burgener and Ronald E. Reedy, Champions of Sapphire Intergrated Circuit Technology, to Receive 2011 IEEE Daniel E. Noble Award for Emerging Technologies". IEEE News Release. Retrieved 10 February 2014.
  14. ^ "IEEE Daniel E. Noble Award for Emerging Technologies Recipients". IEEE website. Retrieved 13 November 2013.
  15. ^ Blyler, John (Summer 2011). "Noble Award Honors Low-Power RF Technology". Chip Design. Retrieved 28 January 2014.
  16. ^ "Peregrine's co-founders to receive IEEE award for Emerging Technologies". Semiconductor Today. 31 May 2011. Retrieved 10 February 2014.

External links

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