IEEE Daniel E. Noble Award

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The IEEE Daniel E. Noble Award for Emerging Technologies is a technology award from the IEEE for newly emerging technologies that are based on developments in recent years. It has been awarded to individuals or groups of up to three people since 2001.

It replaces the IEEE Morris N. Liebmann Memorial Award , which has been awarded since 1919, and is named after Daniel E. Noble (1901–1980), a Motorola engineer who designed the first FM radio system for the police in a state in the USA installed.

Award winners

Each with an official justification

  • 2001: Katsutoshi Izumi , For pioneering development of Separation by Implanted Oxygen (SIMOX) technology
  • 2002: Masataka Nakazawa , For pioneering development of 1.48 μm InGaAsP laser-diode pumping of erbium-doped fiber amplifiers (EDFA)
  • 2003: Kenichi Iga , For pioneering developments of surface emitting semiconductor lasers and arrays
  • 2004: Larry J. Hornbeck , For his pioneering work and sustained development of the Digital Micromirror Device, used in projection displays
  • 2005: David L. Harame , For the development of manufacturable Silicon Germanium, HBT Bipolar and BiCMOS technologies
  • 2006: Carlos A. Paz de Araujo , For fundamental contributions and commercialization in the field of Ferroelectric Random Access Memory (FeRAM)
  • 2007: Stephen R. Forrest , Richard Henry Friend , Ching W. Tang , For pioneering contributions to the development of organic light emitting diodes (OLEDs)
  • 2008: James M. Daughton , Stuart Parkin , Saied Tehrani , For fundamental contributions to the development of magneto-resistive devices for non-volatile, high density, random access memory
  • 2009: Larry F. Weber , For pioneering contributions to Plasma Display Technology and its commercialization
  • 2010: Shinichi Abe , Shoichi Sasaki , Takehisa Yaegashi For pioneering contributions to the development and market penetration of hybrid electric vehicles (HEVs) through the establishment of innovative architectures and control technologies
  • 2011: Mark L. Burgener , Ronald E. Reedy For basic research and development of silicon on sapphire technology culminating in high-yield, commercially viable integrated circuits
  • 2012: Subramanian S. Iyer , For the development and implementation of embedded DRAM technologies
  • 2013: Jan P. Allebach , For the development of the Tone-Dependent Error Diffusion algorithm used widely in inkjet and laser printers
  • 2014: Gabriel M. Rebeiz , For pioneering contributions enabling commercialization of RF MEMS technology and tunable micro- and millimeter-wave systems
  • 2015: Khalil Najafi , For leadership in micro-electro-mechanical systems (MEMS), technologies, and devices and for seminal contributions to inertial devices and hermetic wafer-level packaging
  • 2016: Mark G. Allen , For contributions to research and development, clinical translation, and commercialization of biomedical microsystems.
  • 2017: Miguel AL Nicolelis , For seminal contributions to brain-machine interfaces.
  • 2018: Rajiv V. Joshi , For contributions to predictive failure analytics, VLSI memory design, and technology.
  • 2019: Thomas Kenny , For the development and widespread commercialization of MEMS resonators for timing applications.
  • 2020: Miroslav Micovic , For leadership in millimeter-wave Gallium Nitride (GaN) transistor and technology development.

Web links

  1. ↑ 2020 IEEE Technical Field Award Recipients and Citations. (PDF; 203 kB) In: ieee.org. July 1, 2019, accessed on July 10, 2019 .