Aluminum gallium indium phosphide
Aluminum gallium indium phosphide (AlInGaP), also known as aluminum indium gallium phosphide , is a III-V compound semiconductor consisting of aluminum and the alloy gallium indium phosphide . The material is a direct semiconductor and is used to manufacture bright light-emitting diodes and laser diodes in the color range orange-red, yellow to green-yellow. The color of the light-emitting diode is selected by changing the band gap through the mixing ratio of the two starting substances.
Crystalline layers of AlInGaP are grown by epitaxy on a substrate of gallium arsenide (GaAs) or gallium phosphide (GaP).
literature
- Gerald B. Stringfellow, M. George Craford : High Brightness Light Emitting Diodes . 1st edition. tape 48 (Semiconductors & Semimetals). Academic Press, 1997, ISBN 978-0-12-752156-5 .
Individual evidence
- ↑ Patent application DE10020612 : LED based on an AIGalnP system and epitaxial wafers for the LED. Registered on April 27, 2000 , applicant: Hitachi Cable, inventor: Naoki Kaneda, Taichiro Konno, Masahiro Noguchi, Kenji Shibata, Masatomo Shibata.