Aluminum gallium indium phosphide

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Aluminum gallium indium phosphide (AlInGaP), also known as aluminum indium gallium phosphide , is a III-V compound semiconductor consisting of aluminum and the alloy gallium indium phosphide . The material is a direct semiconductor and is used to manufacture bright light-emitting diodes and laser diodes in the color range orange-red, yellow to green-yellow. The color of the light-emitting diode is selected by changing the band gap through the mixing ratio of the two starting substances.

Crystalline layers of AlInGaP are grown by epitaxy on a substrate of gallium arsenide (GaAs) or gallium phosphide (GaP).

literature

Individual evidence

  1. Patent application DE10020612 : LED based on an AIGalnP system and epitaxial wafers for the LED. Registered on April 27, 2000 , applicant: Hitachi Cable, inventor: Naoki Kaneda, Taichiro Konno, Masahiro Noguchi, Kenji Shibata, Masatomo Shibata.