Gallium arsenide phosphide

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Gallium arsenide phosphide (GaAs 1 − x P x ) is an alloy and III-V compound semiconductor consisting of the two semiconductors gallium arsenide (GaAs) and gallium phosphide (GaP).

Gallium arsenide phosphide is used as a material in the field of optoelectronics for the production of red, orange to yellow light-emitting diodes (LEDs). The concrete color is set by the mixing ratio of the two basic substances, this is expressed as x in the empirical formula. This allows the band gap of the semiconductor material to be changed and thus its optical properties to be influenced. To improve the quality of light-emitting diodes based on this material, structures with a doping of nitrogen (N) are used, and the material is referred to as GaAsP: N.

At the mixing ratio of x = 0.45, GaAs 55 P 45 has a band gap of 1.98  eV and is commercially available under the CAS number 210471-34-4.

Individual evidence

  1. ↑ George D. Clark, Jr., Nick Holonyak, Jr .: Optical Properties of Gallium Arsenide-Phosphide . tape 156 , no. 3 . The American Physical Society, 1967, pp. 913-924 , doi : 10.1103 / PhysRev.156.913 .
  2. ↑ Tadashige Sato, Megumi Imai: Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes . tape 41 . Japan Journal of Applied Physics, 2002, p. 5995-5998 , doi : 10.1143 / JJAP.41.5995 .
  3. ^ Gallium Arsenide Phosphide (GaAsP) Semiconductors. Retrieved November 3, 2013 .