IGC thyristor
The IGC thyristor ( English integrated gate-commutated thyristor , IGCT) is a further development of the GTO thyristor . IGCTs are distinguished from these by:
- a reduced wiring effort
- Increase in the maximum pulse frequencies for control
- better switching times when connected in series
In addition, IGCT tolerate higher voltage rise rates (d V / d t ), which in most cases makes the use of snubbers unnecessary.
To switch off, they require a gate current that is higher than the anode current. This results in short switch-off times, but also requires large capacitor banks in the vicinity of the IGCT.
IGCTs can be designed symmetrically (blocking in reverse direction) or asymmetrically (breakdown voltage in reverse direction some 10 V). The latter are characterized by lower line losses and are referred to as A-IGCTs. Usually, an anti-parallel diode is functionally integrated in a manner similar to the body diode of a MOSFET and this component is then referred to as RC-IGCT (for reverse conducting ).
The field of application of IGCTs are converter high performance. A single module typically switches a few kilo amps at a typical reverse voltage of 4500 V.
Web links
- Peter K. Steimer, Horst E. Grüning, Johannes Werninger: IGCT - a new, future-oriented technology for cost-effective high-performance converters (PDF; 431 kB). ABB technology. 5/98, pp. 1–2 (information on IGCT).
- [1] IGCT Insulated Gate Commutated Thyristor