Indium Gallium Zinc Oxide

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Indium Gallium Zinc Oxide (IGZO) is a semiconductor material that can be used as a channel for a transparent thin film transistor . It replaces amorphous silicon as the active layer in an LC screen and, with its 40 times higher electron mobility than amorphous silicon, enables both smaller pixels (for screen resolutions higher than HDTV ) and faster response times for a screen.

The advantage over zinc oxide is that it can be deposited as a uniform amorphous phase, while maintaining the high charge carrier mobility of the oxide semiconductor. The transistors are somewhat sensitive to light, but the effect is only visible in the deep violet to ultraviolet (photon energy above 3 eV) range and offers the possibility of a completely transparent transistor.

literature

  • Chiao-Shun Chuang et al .: P-13: Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays . In: SID Symposium Digest of Technical Papers . tape 39 , no. 1 , 2008, p. 1215-1218 , doi : 10.1889 / 1.3069354 ( umich.edu [PDF]).