Pseudostatic RAM
Pseudostatic RAM ( PSRAM ) is a type of memory component for computers . Its content is volatile, i.e. the stored information is lost when the operating voltage is switched off.
A PSRAM consists of a DRAM with a built-in control circuit for the necessary refreshing of the memory cells and a circuit for converting the SRAM interface to a DRAM interface. As a result, it combines the advantages of the small area required by the DRAM with the relatively simple control of an SRAM .
Depending on the manufacturer, the product names for the PSRAM are CellularRAM ( Micron Technology ), 1T-SRAM ( MoSys ) and PSiRAM ( Tezzaron Semiconductor , 2003).
Individual evidence
- ^ PSRAM / CellularRAM. (No longer available online.) Micron Technology, 2012, archived from the original on September 20, 2012 ; Retrieved September 12, 2012 (Micron Technology product page). Info: The archive link was inserted automatically and has not yet been checked. Please check the original and archive link according to the instructions and then remove this notice.
- ↑ PN Glaskowsky: MoSys explains 1T-SRAM technology . In: Microprocessor Report . tape 13 , no. 12 , 1999, p. 1–2 ( PDF [accessed September 12, 2012]).
- ↑ Mark LaPedus: Tezzaron rolls out 'PSiRAM' memory technology. In: EE Times . News and Analysis. August 18, 2003, accessed September 12, 2012 .