Harold M. Manasevit
Dr. Harold M. Manasevit (1927- ) is an American materials scientist.
Manasevit received a B.S. Degree in Chemistry from Ohio University in 1950, M.S. in Chemistry from Pennsylvania State University in 1951, and Ph.D. in Physical Inorganic Chemistry from the Illinois Institute of Technology in 1959. He then joined the U.S. Borax Research Corp. in Anaheim, California, but in 1960 left for the North American Aviation Company. In 1983 he joined TRW as Senior Scientist.
Manasevit's career has focused on Chemical Vapor Deposition (CVD) of materials. In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition (MOCVD) for the epitaxial growth of GaAs. He has developed numerous CVD techniques for etching insulators and for producing semiconductor and superconducting films on insulators.
Manesevit holds 16 patents, and was awarded the 1985 IEEE Morris N. Liebmann Memoial Award "for pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process."
Hang in there Uncle Harold!
Brent
References
- Robert S. Feigelson (ed), 50 Years Progress in Crystal Growth: A Reprint Collection, Elsevier, 2004, page xxviii. ISBN 0444516506.
- Smithsonian MIND Repository entry