Aluminum gallium nitride

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Aluminum gallium nitride ( Al Ga N Al x Ga 1-x N) is an alloy of aluminum nitride (AlN) and gallium nitride (GaN) and belongs to the group of III-V compound semiconductors .

The alloy is used as a material for the production of light-emitting diodes (LED) from the visible green color range to the UV-C range with wavelengths just under 250  nm . The specific wavelength is set during production by varying the mixing ratio of aluminum nitride to gallium nitride. In 2016, Nakamura et al. a green emitting LED development based on Al 0.30 Ga 0.70 N, which had a maximum light output of 239 lm / W at approx. 525 nm.

The III-V compound semiconductor is also used as a material for high-electron mobility transistors (HEMT) as a detector for ultraviolet radiation. To form heterojunctions in semiconductor technology , the alloy aluminum gallium nitride is used together with the two starting semiconductors aluminum nitride and gallium nitride.

literature

  • Stephen J. Pearton, Cammy R. Abernathy, Fan Ren: Gallium Nitride Processing for Electronics, Sensors and Spintronics . Springer, London 2010, ISBN 978-1-84996-965-9 .

Individual evidence

  1. ^ K. Sairam: Optical Communications . Laxmi Publications, 2008, ISBN 978-81-318-0242-7 , pp. 68-69 .
  2. ↑ OSA Publishing: "High luminous efficacy green light-emitting diodes with AlGaN cap layer"