Hellmut Fritzsche

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Hellmut Fritzsche (born February 20, 1927 in Berlin ; † June 17, 2018 ) was a German-American solid-state physicist.

After graduating from the University of Göttingen in 1952, Fritzsche went to the USA. In 1954 he received his doctorate from Purdue University , where he became an instructor and in 1955 an assistant professor in the same year. In 1957 he went to the University of Chicago as an assistant professor , where he became a professor in 1963 and remained until his retirement in 2004. At times he was head of the physics faculty.

Fritzsche is known for his work on the metal-insulator transition in doped semiconductors and on amorphous (non-crystalline) materials, for example amorphous silicon and in particular on the role of built-in hydrogen in improving its electronic properties.

From 1967 he was vice-president and member of the board of directors of Energy Conversion Devices Incorporated, the development company ( e.g. solar cells , batteries) of Stanford Ovshinsky , with whom he worked closely on the application of amorphous materials.

In 1989 he received the Oliver E. Buckley Condensed Matter Prize . In 1988 he received an honorary doctorate from Purdue University. In 2004 he received the Stanford R. Ovshinsky Award for Excellence in Non-Crystalline Chalcogenides

Fonts

  • Published in: Amorphous Silicium and related materials , Parts A, B, World Scientific 1989
  • Editor: Transport, correlation and structural defects , World Scientific 1990
  • Editor with David Adler: Localization and metal-insulator transitions , Plenum Press 1985 (vol. 3 of a commemorative publication for Nevill Francis Mott )
  • Electronic phenomena in amorphous semiconductors , Annual Review of Material Science , Vol. 2, 1972, pp. 697-744
  • Editor with Brian Schwartz: Stanford R. Ovshinsky - the science and technology of an american genius , World Scientific 2008

Web links

Individual evidence

  1. ↑ Hellmut and Sybille C. Fritzsche: Obituary. In: Arizona Daily Star. Legacy.com, June 24, 2018, accessed June 25, 2018 .
  2. ↑ Fritzsche, Tanielian, Tsai, Gaczi: hydrogen content and density of plasma Deposited amorphous silicon . In: J. Applied Physics . tape 50 , 1979, pp. 3366 .
  3. ^ 1989 Oliver E. Buckley Condensed Matter Physics Prize Recipient: Hellmut Fritzsche. APS, accessed on February 24, 2018 : "For his seminal transport studies of impurity band conduction near the metal-insulator transition and his leadership in our understanding of amorphous semi-conductors"
  4. ^ Mihai Popescu: Stanford R. Ovshinsky Prize for Excellence in Amorphous Chalcogenides Past & Present . In: Phys. Status solidi B . tape 249 , no. 10 , 2012, p. 1835–1836 , doi : 10.1002 / pssb.201200348 (English, wiley.com [PDF]).
personal data
SURNAME Fritzsche, Hellmut
BRIEF DESCRIPTION German-American physicist
DATE OF BIRTH February 20, 1927
PLACE OF BIRTH Berlin
DATE OF DEATH 17th June 2018