Indium gallium phosphide
Indium gallium phosphide (InGaP), also known as gallium indium phosphide (GaInP), is a semiconductor material and the name for a group of alloys made from indium (In), gallium (Ga) and phosphorus (P). The alloy forms crystals with a zinc blende structure and is one of the III-V compound semiconductors . Because of its high electron mobility , similar to the related III-V semiconductor indium gallium arsenide , the semiconductor is used as a base material for heterojunction bipolar transistors (HBT) and HEM transistors (HEMT) in high-frequency amplifiers . Further applications are in the field of optoelectronics for solar cells .
Depending on the mixing ratio of the starting substances indium and gallium, a notation in the form In 1− X Ga X P is used, where X indicates the mixing ratio, the band gap of the semiconductor material changes. In semiconductor technology, the mixing ratio of X = 0.5 in the form of In 0.5 Ga 0.5 P is important because the lattice constant of indium gallium phosphide is thus equal to the lattice constant of gallium arsenide (GaAs). These two semiconductors are used together to form what are known as tandem solar cells .
In connection with aluminum , the alloy aluminum gallium indium phosphide (AlGaInP) is formed, which is used as the base material for ultra - bright light - emitting diodes (LED) in the color range orange, yellow to green.
literature
- E. Fred Schubert: Light-Emitting Diodes . Cambridge University Press, 2003, ISBN 978-0-521-53351-5 .