# Majority carrier

Majority charge carrier is the name of the type of charge carrier in a doped semiconductor that occurs more frequently than minority charge carriers due to the doping . With p- doping , the majority charge carriers are the defect electrons (also called holes), with n-doping it is the electrons .

Depending on the semiconductor material and doping element, it can happen that practically all donors or acceptors are ionized at room temperature ( impurity depletion ). In the case of single doping (only one type of doping present), significantly greater intrinsic conduction density ( or ) of the semiconductor, this leads to a majority charge carrier concentration of the (the holes) or (the electrons) in the ${\ displaystyle N _ {\ mathrm {A}} ^ {-} \ gg n _ {\ mathrm {i}}}$${\ displaystyle N _ {\ mathrm {D}} ^ {+} \ gg n _ {\ mathrm {i}}}$${\ displaystyle p}$${\ displaystyle n}$

• p-area:
${\ displaystyle p = {\ frac {N _ {\ mathrm {A}} ^ {-}} {2}} + {\ sqrt {\ left ({\ frac {N _ {\ mathrm {A}} ^ {-} } {2}} \ right) ^ {2} + n _ {\ mathrm {i}} ^ {2}}} \ approx N _ {\ mathrm {A}} ^ {-} = N _ {\ mathrm {A}} = \ mathrm {const.} \,}$
• n-area:
${\ displaystyle n = {\ frac {N _ {\ mathrm {D}} ^ {+}} {2}} + {\ sqrt {\ left ({\ frac {N _ {\ mathrm {D}} ^ {+} } {2}} \ right) ^ {2} + n _ {\ mathrm {i}} ^ {2}}} \ approx N _ {\ mathrm {D}} ^ {+} = N _ {\ mathrm {D}} = \ mathrm {const.} \,}$

with the intrinsic conduction density , the concentrations of the ionized donor and acceptor atoms and the concentration of all (charged and neutral) donors and acceptors . ${\ displaystyle n _ {\ mathrm {i}}}$${\ displaystyle N _ {\ mathrm {D}} ^ {+}}$${\ displaystyle N _ {\ mathrm {A}} ^ {-}}$${\ displaystyle N _ {\ mathrm {D}}}$${\ displaystyle N _ {\ mathrm {A}}}$

## literature

• Albrecht Möschwitzer, Klaus Lunze: semiconductor electronics. Textbook . 2., arr. Aufl. Verl. Technik, Berlin 1975, DNB  200142224 .

## Individual evidence

1. a b Frank Thuselt: Physics of semiconductor components: an introductory textbook for engineers and physicists . Springer, Berlin / Heidelberg / New York 2005, ISBN 3-540-22316-9 , pp. 68 ff .