Majority carrier

Majority charge carrier is the name of the type of charge carrier in a doped semiconductor that occurs more frequently than minority charge carriers due to the doping . With p- doping , the majority charge carriers are the defect electrons (also called holes), with n-doping it is the electrons .

Depending on the semiconductor material and doping element, it can happen that practically all donors or acceptors are ionized at room temperature ( impurity depletion ). In the case of single doping (only one type of doping present), significantly greater intrinsic conduction density ( or ) of the semiconductor, this leads to a majority charge carrier concentration of the (the holes) or (the electrons) in the ${\displaystyle N_{\mathrm {A} }^{-}\gg n_{\mathrm {i} }}$ ${\displaystyle N_{\mathrm {D} }^{+}\gg n_{\mathrm {i} }}$ ${\displaystyle p}$ ${\displaystyle n}$

• p-area:

  ${\displaystyle p={\frac {N_{\mathrm {A} }^{-}}{2}}+{\sqrt {\left({\frac {N_{\mathrm {A} }^{-}}{2}}\right)^{2}+n_{\mathrm {i} }^{2}}}\approx N_{\mathrm {A} }^{-}=N_{\mathrm {A} }=\mathrm {konst.} \,}$

• n-area:

  ${\displaystyle n={\frac {N_{\mathrm {D} }^{+}}{2}}+{\sqrt {\left({\frac {N_{\mathrm {D} }^{+}}{2}}\right)^{2}+n_{\mathrm {i} }^{2}}}\approx N_{\mathrm {D} }^{+}=N_{\mathrm {D} }=\mathrm {konst.} \,}$

with the intrinsic conduction density , the concentrations of the ionized donor and acceptor atoms and the concentration of all (charged and neutral) donors and acceptors . ${\displaystyle n_{\mathrm {i} }}$ ${\displaystyle N_{\mathrm {D} }^{+}}$ ${\displaystyle N_{\mathrm {A} }^{-}}$ ${\displaystyle N_{\mathrm {D} }}$ ${\displaystyle N_{\mathrm {A} }}$

literature

• Albrecht Möschwitzer, Klaus Lunze: semiconductor electronics. Textbook . 2., arr. Aufl. Verl. Technik, Berlin 1975, DNB  200142224 .

Individual evidence

1. ↑ ^{a b} Frank Thuselt: Physics of semiconductor components: an introductory textbook for engineers and physicists . Springer, Berlin / Heidelberg / New York 2005, ISBN 3-540-22316-9 , pp. 68 ff .