Insulating gate field effect transistor

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Example of an IGFET, here n-channel MOSFET , with an insulation layer made of silicon dioxide (yellow)

Insulated gate field effect transistor , also called " field-effect transistor with insulated gate" ( English insulated-gate field-effect transistor , IGFET 's) the designation for one of the two main groups of field effect transistors. In contrast to the other group, the field-effect transistors with non-insulated-gate field-effect transistors ( NIGFET ), the current flow of the IGFET is controlled by charge carrier influenz (electrostatic induction) via a gate that is electrically insulated from the conductive channel .

IGFETs be (alternatively after the typical layer structure of metal-insulator-semiconductor ., Engl metal insulator semiconductor MIS) as MISFETs designated. The abbreviation of the most popular representative of this group, the MOSFET (Metal-Oxide-Semiconductor-FET), is often used as a synonym for IGFET or MISFET. This is due to the development history of microelectronics, in which silicon dioxide is still the most widely used material for the gate oxide even today (2013). Using an oxide for the insulation layer (be it silicon dioxide or newer high-k materials like hafnium dioxide ) is only one option, however. Alternative materials are silicon nitride , polymers (in newer circuits based on organic semiconductors) or combinations of different materials (for example nitride and oxide, as in the metal-nitride-oxide-semiconductor FET, MNOSFET).

A distinction is made between the following types of field effect transistors (with insulated gate, IGFETs):

Main article on how it works: metal-oxide-semiconductor field effect transistor


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