Scaling (microelectronics)

The following important information is missing from this article or section:

* History of scaling: how was the standard scaling before the year 2000 and how after the year 2000 (scaling factor, same scaling for processors and memory)? etc.

• Advantages and disadvantages of the different scaling approaches

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The term scaling ( English scaling or downscaling ) describes in the field of microelectronics and nanoelectronics the reduction of the geometric dimensions of components (usually MOSFETs ) and the associated change of other relevant component parameters (see integration density and technology nodes ).

A distinction is made between scaling while maintaining the applied voltage ( English constant-voltage scaling ) and the electrical field strength ( English constant-field scaling ). In addition to the lateral dimensions, the parameters influenced by the scaling are the doping of the semiconductor material , the insulator layer thickness (gate oxide), the currents through the component, the thermal power dissipation and the transit time of the charge carriers (associated limit, transit and maximum frequency).

The original aim of scaling was to reduce the space required on the semiconductor substrate and thus the costs (see also Moore's law ). The associated improvement in the dynamic properties ( frequencies ) was a welcome side effect, which v. a. has become the driving force behind scaling in the microprocessor sector . In the last few decades, techniques have been developed and made ready for series production that have overcome assumed physical limits.

In 2019, transistor lengths in the range of less than 10 nm will be state of the art . The use of 2D materials promises great potential for further scaling of the components, i.e. the production of transistors in the size range of a few nanometers . These materials have layer thicknesses from a layer of atoms or molecules of z. B. molybdenum disulfide .

literature

• Wai-Kai Chen: The electrical engineering handbook . Academic Press, 2005, ISBN 978-0-12-170960-0 , pp. 120–121 ( limited preview in Google Book search).

Individual evidence

1. ↑ Werner Schulz: Departure into nanoelectronics. In: ingenieur.de. Retrieved June 17, 2020 . 
2. ^ Neil Tyler: 2D materials paving the way to extreme scaling. New Electronics, December 9, 2019, accessed December 10, 2019 .