Stopping and Range of Ions in Matter

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Stopping and Range of Ions in Matter ( SRIM ) is a program package for calculating the interactions ( braking capacity ) of ions with other media (solids, etc.). The main program of SRIM is Transport of ions in matter ( TRIM ). SRIM is widely used in the field of ion implantation as well as other branches of radiation materials science.

history

SRIM was created in 1980 as a DOS-based program under the name TRIM. This DOS version of the program was updated until 1998 and is still available for download. On a UNIX system, it can be operated on a PC using a DOS emulator. SRIM-2000 requires a system with Microsoft Windows.

The programs were developed by James F. Ziegler and Jochen P. Biersack around 1983 and have been continuously updated since then, with the main changes being made approximately every 5 years. SRIM is based on the Monte Carlo method , more precisely the approximation of binary collisions (engl. Binary collision approximation ) one another with a random choice of the parameters the following ions.

functionality

As input parameters, TRIM / SRIM requires the ion type and energy (the range between 10 eV and 2 GeV is supported) and the material system as a single layer or layer stack of the target. The program uses a one-dimensional layer stack, i.e. H. a simulation of materials with different compositions in two or three dimensions is not possible.

Since the atomic cascades and thus the result generally vary greatly from ion to ion, an analysis of several hundred or even ten thousand ions is carried out using the statistics. The programs are designed so that they can be interrupted at any time and restarted later. SRIM-2000 also has an easy-to-use user interface.

The starting parameters are the three-dimensional distribution of the ions in the target material system and their parameters such as penetration depth, their distribution ( called straggle ) along and perpendicular to the incident ion beam, all atomic cascades in detail, the concentration of vacancies, sputter rate, ionization and phonon production in the target material system as well as the energy distribution between nuclear and electron losses, energy deposition rate provided.

Another part of the program allows the calculation of the electronic braking capacity of each ion in each material (including gaseous targets) on the basis of an averaging parameterization of a large number of experimental data. These properties made SRIM very popular. However, it does not take into account the crystal structure or dynamic changes in the composition of the material, which greatly limits its usefulness in some cases.

Further approximations concern the exclusive support of binary collisions (i.e. the influence of neighboring atoms is neglected), the assumption of a completely amorphous target material (i.e. a description of lattice guide effects is not possible), the exclusion of a recombination of chipped atoms (interstitials) with vacancies, an effect which is known to be very important during heat spikes in metals.

There is no description of defect clustering and radiation-induced amorphization, although the former occurs in most materials and the latter is very important in semiconductors.

The threshold displacement energy is a step function for each element, even if it is actually dependent on the crystal direction.

Web links

literature

  • JF Ziegler, JP Biersack and U. Littmark: The Stopping and Range of Ions in Solids , 1st. Edition, Pergamon Press , New York 1985.
  • JF Ziegler and JP Biersack and MD Ziegler: SRIM - The Stopping and Range of Ions in Matter . SRIM Co., 2008, ISBN 978-0-9654207-1-6 .
  • A. Galdikas: Interaction of ions with condensed matter . Nova Publishers , 2000, ISBN 978-1-56072-666-1 , p. 15.
  • JF Ziegler: RBS / ERD simulation problems: Stopping powers, nuclear reactions and detector resolution . In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms . tape 136-138 , March 2, 1998, pp. 141-146 , doi : 10.1016 / S0168-583X (97) 00664-2 .
  • James F. Ziegler: SRIM-2003 . In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms . tape 219–220 , June 1, 2004, pp. 1027-1036 , doi : 10.1016 / j.nimb.2004.01.208 .

Individual evidence

  1. ^ A b J. P. Biersack, LG Haggmark: A Monte Carlo computer program for the transport of energetic ions in amorphous targets . In: Nuclear Instruments and Methods . 174, No. 1-2, 1980, pp. 257-269. bibcode : 1980NucIM.174..257B . doi : 10.1016 / 0029-554X (80) 90440-1 .
  2. ↑ a b c J. F. Ziegler, JP Biersack, U. Littmark: The Stopping and Range of Ions in Matter . Pergamon Press , New York 1985, ISBN 978-0-08-021607-2 .
  3. ↑ Particle interactions with matter . Retrieved August 17, 2014.
  4. ↑ M. Robinson, I. Torrens: Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation . In: Physical Review B . 9, No. 12, 1974, pp. 5008-5024. bibcode : 1974PhRvB ... 9.5008R . doi : 10.1103 / PhysRevB.9.5008 .
  5. ^ Gary S. Was: Fundamentals of Radiation Materials Science: Metals and Alloys . 2nd Edition. Springer-Verlag, New York 2017, ISBN 978-1-4939-3436-2 , doi : 10.1007 / 978-1-4939-3438-6 .
  6. ^ R. Smith (Eds.): Atomic & Ion Collisions in Solids and at Surfaces: Theory, Simulation and Applications . Cambridge University Press , Cambridge, UK 1997, ISBN 978-0-521-44022-6 .
  7. ↑ MT Robinson, OS Oen: The channeling of energetic atoms in crystal lattices . In: Applied Physics Letters . 2, No. 2, 1963, pp. 30-32. bibcode : 1963ApPhL ... 2 ... 30R . doi : 10.1063 / 1.1753757 .
  8. ^ RS Averback, T. Diaz De la rubia: Displacement Damage in Irradiated Metals and Semiconductors . In: Henry Ehrenreich, Frans Spaepen (Ed.): Solid State Physics (=  Solid State Physics ). tape 51 . Academic Press, 1998, ISBN 978-0-12-607751-3 , pp. 281-402 , doi : 10.1016 / S0081-1947 (08) 60193-9 ( helsinki.fi [PDF]).
  9. ↑ K. Nordlund, M. Ghaly, RS Averback, M. Caturla, T. Diaz de la Rubia, J. Tarus: Defect production in collision cascades in elemental semiconductors and fcc metals . In: Physical Review B . 57, No. 13, 1998, pp. 7556-7570. bibcode : 1998PhRvB..57.7556N . doi : 10.1103 / PhysRevB.57.7556 .
  10. ↑ P. Partyka, Y. Zhong, K. Nordlund, RS Averback, IM Robinson, P. Ehrhart: Grazing incidence diffuse x-ray scattering investigation of the properties of irradiation-induced point defects in silicon . In: Physical Review B . 64, No. 23, 2001, p. 235207. bibcode : 2001PhRvB..64w5207P . doi : 10.1103 / PhysRevB.64.235207 .
  11. ↑ MA Kirk, IM Robertson, ML Jenkins, CA English, TJ Black, JS Vetrano: The collapse of defect cascades to dislocation loops . In: Journal of Nuclear Materials . 149, No. 1, 1987, pp. 21-28. bibcode : 1987JNuM..149 ... 21K . doi : 10.1016 / 0022-3115 (87) 90494-6 .
  12. ^ MO Ruault, J. Chaumont, JM Penisson, A. Bourret: High resolution and in situ investigation of defects in Bi-irradiated Si . In: Philosophical Magazine A . 50, No. 5, 1984, pp. 667-675. bibcode : 1984PMagA..50..667R . doi : 10.1080 / 01418618408237526 .
  13. ↑ P. Vajda: Anisotropy of electron radiation damage in metal crystals . In: Reviews of Modern Physics . 49, No. 3, 1977, pp. 481-521. bibcode : 1977RvMP ... 49..481V . doi : 10.1103 / RevModPhys.49.481 .