TRAPATT diode

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The TRAPATT diode ( English trapped plasma avalanche transit triggers ) is a high frequency - semiconductor - component of the microelectronics , which as a diode is one of the electronic components. It is a component with high performance and high efficiency . Nowadays, pulsating power of 1.2 kW can be generated at 1.1 GHz (with a series connection of five diodes) and the highest efficiency of 75% could be achieved at 0.6 GHz. The operation of this diode differs significantly from that of an IMPATT diode . The diode has a p + -pn + structure.

literature

  • SM Sze: Physics o Semiconductor Devices . 2nd Edition. John Wiley & Sons, 1981, ISBN 0-471-05661-8 , pp. 627-632 .
  • MS Tyagi: Introduction to Semiconductor Materials and Devices . John Wiley & Sons, 1991, ISBN 0-471-60560-3 , pp. 320-323 .