Takashi Mimura

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Takashi Mimura (born December 14, 1944 in Osaka ) is a Japanese electronics engineer. He is known as the inventor of the high-electron-mobility transistor (HEMT).

Education and career

Mimura studied electrical engineering at Osaka University with a master's degree in engineering in 1970 and then went to Fujitsu . From 1975 he was at Fujitsu Laboratories and in 1982 he received his doctorate from Osaka University. From 1998 he was a Fellow of Fujitsu Laboratories, which he remained until 2017.

From 2006 to 2016 he was a visiting researcher in the Millimeter-Wave Device Project of the Advanced Communication Group of the National Institute of Information and Communications Technology (NICT). From 2016 he conducted research at NICT's Advanced ICT Research Institute.

plant

He developed the HEMT at Fujitsu in 1979/80 as a new transistor semiconductor architecture with high mobility of the charge carriers, which therefore have good high-frequency properties. The fast switching properties are based on the fact that they restrict the conductor geometry to a two-dimensional electron gas. You can also operate in the microwave range. Another big advantage is their low noise. In contrast to the widespread CMOS technology, they consist of binary semiconductors such as gallium arsenide and indium phosphide and are primarily used for individual transistors, not for integrated circuits. The widespread use in satellite receivers was achieved by reducing production costs (as of 2018) by a factor compared to the costs in the early 1980s, which was surprising even for Mimura. Further applications are, for example, GPS receivers, mobile radio devices and their base stations, radio telescopes and collision warning radar in motor vehicles. Thanks to their low noise, their use was essential, for example, when receiving the weak Voyager 2 photos of Neptune in 1989 from a distance of 1.3 billion km.

Recently he has also been working on semiconductor materials for quantum computers.

Memberships and honors

In 1990 he and Satoshi Hiyamizu received the IEEE Morris N. Liebmann Memorial Award , the Japanese Imperial Invention Price in 1992, the Welker Award in 1998 and the Kyoto Prize in 2017 . He also received the Achievement Award from the Institute of Electronics, Information and Communication Engineers (IEICE) in 1982 and the Japan Society for Applied Physics (JSAP) in 2004 and the Japanese Medal with Purple Ribbon in 1998. He is an Honorary Fellow of Fujitsu Laboratories. He is a fellow of the IEEE .

Fonts (selection)

  • T. Mimura, S. Hiyamizu, T. Fujii, K. Nanbu: A New Field-Effect Transistor with Selectively Doped GaAs / n-AlxGa1-xAs Heterojunctions , Japanese Journal of Applied Physics, Volume 19, 1980, L 225-L227
  • T. Mimura, Kazukiyo Joshin, Satoshi Hiyamizu, Kohki Hikosaka, Masayuki Abe: High Electron Mobility Transistor Logic , Japanese Journal of Applied Physics, Volume 20, 1981, L 598
  • T. Mimura: Development of High Electron Mobility Transistor , Japanese Journal of Applied Physics, Volume 44, 2005, p. 8263

Web links

Individual evidence

  1. ^ Samuel K. Moore: 5 Questions for HEMT Inventor Takashi Mimura , IEEE Spectrum, March 23, 2018
personal data
SURNAME Mimura, Takashi
BRIEF DESCRIPTION Japanese electronics engineer
DATE OF BIRTH December 14, 1944
PLACE OF BIRTH Osaka