Aluminum gallium arsenide

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Crystal structure
Structure of gallium arsenide
__ Ga 3+ / Al 3+      __ As 3−
General
Surname Aluminum gallium arsenide
Ratio formula Al x Ga 1 − x As
External identifiers / databases
CAS number not forgiven
Wikidata Q304176
properties
Molar mass variable
Physical state

firmly

density

(5.32 - 1.56 x) g cm −3 (at 300  K )

safety instructions
GHS hazard labeling
no classification available
As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Aluminum gallium arsenide ( Al x Ga 1 − x As ) is a semiconductor with almost the same lattice parameter as GaAs , but a larger band gap . The aluminum content x can be varied between 0 and 100% during the synthesis, whereby the band gap can be set between 1.42  eV (GaAs) and 2.16 eV (AlAs). For x <0.4 there is a direct band gap , otherwise there is an indirect band gap .

The formula AlGaAs is used as an abbreviation when the aluminum content is indefinite.

The ternary compound AlGaAs is a very important material system in basic research and industrial application. Because the lattice parameter is almost independent of the composition, it is possible to produce unstrained semiconductor heterostructures using epitaxial methods such as molecular beam epitaxy or metal organic vapor phase epitaxy ( MOVPE ) .

The possibility of designing the band gap differently in different areas is the basis for electronic components such as diode lasers , light-emitting diodes , heterojunction bipolar transistors (HBT) and high electron mobility transistors (HEMT).

literature

Individual evidence

  1. ↑ Basic parameters at 300 K
  2. ↑ This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.

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