Indium gallium nitride

Crystal structure
	__ Ga 3+ __ N 3−
General
Surname	Indium gallium nitride
Ratio formula	In x Ga 1-x N
External identifiers / databases
Wikidata	Q425734
properties
Molar mass	no fixed composition
safety instructions
GHS hazard labeling ; no classification available
GHS hazard labeling ; no classification available
	As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Indium gallium nitride (InGaN, In _x Ga _1-x N) is a III-V semiconductor which is formed from the two basic substances gallium nitride and indium nitride . This material is used in particular in optoelectronics to produce blue, violet and green light-emitting diodes and blue-violet laser diodes , which are used in the field of optical storage media such as the Blu-ray Disc . Green laser diodes based on InGaN are also available. Combined with blue and red laser diodes, these are interesting for future display technologies, as the green emitted (approx. 515 nm) encompasses a larger area in the CIE standard valence system than was previously the case.

Due to the selectable ratio of gallium nitride to indium nitride, the band gap , and thus the emitted color, can be selected within the scope of the manufacturing process in the range from 0.7 eV to 3.37 eV. A ratio of 2% indium nitride and 98% gallium nitride results in a band gap which ensures an emission in the near ultraviolet , with 20% indium nitride and 80% gallium nitride, on the other hand, a blue-violet radiation with a wavelength of 420 nm is produced 30% / 70% results in radiation of 440 nm, which corresponds to a blue color.

This semiconductor is also used in the field of solar cells . Two layers of InGaN with different mixing ratios are applied on top of each other, which is possible due to the relatively large tolerance of the material. The two layers have different band gaps with 1.1 eV and 1.7 eV. The advantage is that a larger area of the sunlight can be used for energy. The theoretical maximum efficiency ( Shockley-Queisser limit ) of these solar cells is 50%.

Individual evidence

↑ This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.
^ Laboratory success: Directly emitting green InGaN laser with 50 mW , Osram press release, August 13, 2009
↑ A nearly perfect solar cell , part 2 of December 17, 2002 (engl.)

[NV-1] This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.

[2] Laboratory success: Directly emitting green InGaN laser with 50 mW , Osram press release, August 13, 2009

[3] A nearly perfect solar cell , part 2 of December 17, 2002 (engl.)