3D XPoint
3D XPoint ( pronunciation : [ 'θɹiː' diː 'kɹɒs' pɔɪnt ]) is a non-volatile memory technology developed by Intel and Micron Technology and introduced in July 2015 . According to the manufacturer, the memory has a lower memory latency than the non-volatile and widely used NAND flash memory and can be overwritten more often. At Intel, this technology is also called Optane .
While memory cells in NAND flash store the memory content through different electrical voltage levels in field effect transistors , 3D XPoint is based on the change in electrical resistance . The memory chips have a spatial lattice structure, at the crossing points of which the actual information memories are located. They manage without field effect transistors like the flash cells, which makes a higher integration density possible.
Since Intel and Micron do not disclose any details about the exact type of technology, experts speculate in depth on the basis of existing patents and older statements.
Individual evidence
- ↑ New storage technology 3D XPoint: a thousand times faster than Flash , cnet.de on July 29, 2015
- ↑ Breakthrough Nonvolatile Memory Technology ( Memento July 30, 2015 in the Internet Archive ), Micron Technology July 28, 2015
- ↑ If Intel and Micron's "Xpoint" is 3D Phase Change Memory, Boy Did They Patent It ( August 1, 2015 memento in the Internet Archive ), DailyTech Report on July 29, 2015
Web links
- Intel and Micron Produce Breakthrough Memory Technology , Intel press release dated July 28, 2015
- Revolutionary memory combines DRAM and NAND , golem.de on July 28, 2015
- Intel and Micron present the flash alternative 3D XPoint , Christof Windeck on heise online on July 28, 2015
- Intel's 3D Xpoint as an accelerator for desktop PCs , heise online on March 27, 2017