IEEE Andrew S. Grove Award

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The IEEE Andrew S. Grove Award of the IEEE (IEEE Electron Devices Society) is presented annually for advances in semiconductor technology and components since 2000. It is associated with a bronze medal and named after Andrew S. Grove .

It replaced the IEEE Jack A. Morton Award in 2001. Jack A. Morton (1913–1971) was an engineer and inventor at Bell Labs, where he led transistor development in the 1950s (and was previously active in microwave electronics). He was a fellow of the IEEE. In 1971 his book Organizing for Innovation was published .

Laureate Andrew S. Grove Award

Each with a laudation.

  • 2001 Al F. Tasch (University of Texas at Austin) for contributions to MOS technology, ion implantation and component modeling
  • 2002 Dimitri A. Antoniadis (MIT) for essential contributions to field effect components and silicon process modeling
  • 2003 Mark T. Bohr (Intel) for his leadership role in scaling advanced CMOS technology for microprocessors
  • 2004 Krishna Saraswat (Stanford University) for essential contributions to the processing technology of silicon
  • 2005 Tso-Ping Ma (Yale University) for contributions to the understanding and development of CMOS gate dielectrics.
  • 2006 Chang-Gyu Hwang (Samsung) for contributions to the development of advanced memory
  • 2007 James D. Plummer (Stanford University) for essential contributions to the modeling, simulation and physics of silicon electronics
  • 2008 Stefan K. Lai (Intel), for contributions to the commercial development of flash memory
  • 2009 Eric Fossum (Siimpel Corp.), major contributions to CMOS image sensors
  • 2010 Bijan Davari (IBM), contributions to high-performance deep submicron CMOS technology.
  • 2011 Eugene A. Fitzgerald , Judy Hoyt (Professor at MIT) for major contributions to the demonstration of the treatment of stresses due to Si / Ge lattice mismatch for improved conduction properties in MOSFET devices.
  • 2012 Jean-Pierre Colinge (University College Cork) for contributions to silicon-on-insulator technology and components
  • 2013 Shinichi Takagi (University of Tokyo) for contributions to the understanding of the transport in inversion layers of high-power MOSFETs.
  • 2014 Sanjay Banerjee (University of Texas at Austin) for contributions to MOSFETs made from semiconductors of main group IV and related material processing.
  • 2015 Masayoshi Esashi (Tohoku University) for microelectromechanical systems (MEMS) in industrial electronics and for transport purposes.
  • 2016 Carlos H. Díaz (Taiwan Semiconductor Manufacturing) for contributions and leadership in CMOS logic transistor technology.
  • 2017 Sorin Cristoloveanu (CNRS, Grenoble) for contributions to silicon-on-insulator technology and components with thin bodies.
  • 2018 Gurtej S. Sandhu (Micron Technology Inc.) for contributions to CMOS technology, which allowed DRAM and NAND memory chip scaling.
  • 2019 Digh Hisamoto , Chief Senior Scientist at Hitachi, for pioneering work in the manufacture of three-dimensional double-gate MOSFET devices.
  • 2020 Evelyn L. Hu (Harvard University). "For pioneering contributions to microelectronics fabrication technologies for nanoscale and photonic devices."
  • 2021 Hideaki Aochi , Ryota Katsamuta , Masaru Kito (Kioxia Corporation). "For pioneering and sustained contributions to high-density, three-dimensional flash memory."

Jack A. Morton Award winner

  • 1976 Robert N. Hall (General Electric) for outstanding contributions to solid state physics and chemistry and the invention and development of semiconductor components
  • 1977 Morgan Sparks (Sandia Labs) for contributions to solid state electronics and technological and research management
  • 1978 Juri Matisoo (IBM) for pioneering technology in Josephson computers
  • 1979 Martin P. Lepselter (Bell Labs) for the invention of the beam-lead structure and metallurgy in silicon ICs.
  • 1980 James F. Gibbons (Stanford) for pioneering the use of ion implantation in semiconductor devices
  • 1981 Nick Holonyak (University of Illinois at Urbana-Champaign) for contributions to quantum well lasers and semiconductor lasers in the visible and LEDs.
  • 1982 Dov Frohman-Bentchkowsky (Intel Jerusalem) for contributions to non-volatile semiconductor memories
  • 1983 Jun'ichi Nishizawa (Tohoku University) for the invention and development of Static Induction Transistors (SIT) and advances in optoelectronic components
  • 1984 Hans S. Rupprecht , Jerry M. Woodall (IBM) for pioneering work in gallium-aluminum-arsenide heterojunctions and highly efficient LEDs and injection lasers produced by epitaxy in the liquid phase.
  • 1985 Robert D. Burnham , William Streifer (both Xerox), Donald Scifres (Spectra Diode Labs in San José) for contributions to electrically pumped distributed feedback lasers and phase-locked laser arrays of high power
  • 1986 Herbert Kroemer as a pioneer of semiconductor heterostructures
  • 1987 Dennis D. Buss , Richard A. Chapman , Michael A. Kinch (Texas Instruments), for the demonstration and development of mercury-cadmium-telluride monolithically integrated CCD focal plane arrays.
  • 1988 Frank Stern (physicist) (IBM) for contributions to the theory of injection lasers and two-dimensional electron gases
  • 1989 Chih-Tang Sah (Univ. Of Illinois at Urbana-Champaign) for contributions to the understanding of semiconductor defects and the physics of MOS components
  • 1990 Gregory E. Stillman (University of Illinois at Urbana-Champaign), Charles M. Wolfe (Washington University), for the cultivation and characterization of high-purity gallium arsenide and similar compounds
  • 1991 Tak H. Ning , Hwa N. Yu (IBM) for contributions to the development of advanced bipolar and MOS devices
  • 1992 Takuo Sugano (University of Tokyo) for contributions to metal-insulator-semiconductor technology and components
  • 1993 Toshihisa Tsukada (Hitachi) for contributions to the development of buried heterostructure (BH) semiconductor lasers
  • 1994 Robert E. Kerwin (ATT), Donald L. Klein (IBM), John C. Sarace (Rockwell International)
  • 1995 Yoshio Nishi (Hewlett Packard)
  • 1996 Robert W. Dutton (Stanford)
  • 1997 Chenming Hu (University of Berkeley)
  • 1998 Isamu Akasaki , Meijo University, Shuji Nakamura , Nichia Chem. Industries. For contributions to Group III nitride materials and components
  • 1999 Charles H. Henry , Bell Labs, for fundamental contributions to the understanding of the optical properties of quantum wells and semiconductor lasers.
  • 2000: Wolfgang Fichtner (ETH Zurich) for outstanding contributions to the modeling of silicon electronics

Web links

Individual evidence

  1. ↑ For seminal contributions to the demonstration of Si / Ge lattice mismatch strain engineering for enhanced carrier transport properties in MOSFET devices
  2. ↑ 2021 IEEE Technical Field Award Recipients and Citations. (PDF; 222 kB) In: ieee.org. June 30, 2020, accessed on July 5, 2020 .