Isamu Akasaki

from Wikipedia, the free encyclopedia
Isamu Akasaki (2011)

Isamu Akasaki ( Japanese 赤 崎 勇, Akasaki Isamu ; born January 30, 1929 in Kagoshima Prefecture ; † April 1, 2021 in Nagoya ) was a Japanese engineer .

In 1989 Akasaki first produced blue light-emitting diodes based on the pn junction with the semiconductor material gallium nitride . He received in 2011 by the IEEE award honors IEEE Edison Medal . In 2014 he was awarded the Nobel Prize in Physics together with Hiroshi Amano and Shuji Nakamura .

Live and act

Isamu Akasaki studied electrical engineering at the University of Kyoto until 1952 , after which he received his doctorate at the University of Nagoya . His first work in the field of optoelectronics and light-emitting diodes took place in the late 1960s and 1970s, including at companies such as Matsushita , where he used organometallic gas phase epitaxy (MOVPE) to produce crystals from gallium nitride. In 1981 and in the following years, again at Nagoya University, he used MOVPE to produce high-purity single crystals from gallium nitride (GaN) on a sapphire substrate. He was then able to p-dop this highly pure GaN with magnesium ; silicon was used for n-doping so that he was able to produce a pn junction with GaN, which as a direct semiconductor has a band gap in the blue-green color range. In 1989 he succeeded in producing the first efficient blue light-emitting diode. Before there were only blue LEDs based on the indirect semiconductor silicon carbide . These LEDs were already on the market in the 1970s, but never caught on due to their low efficiency.

Isamu Akasaki died in early April 2021 in a hospital in Nagoya at a pneumonia . He was 92 years old.

Honors and awards (selection)

Web links

Commons : Isamu Akasaki  - collection of images, videos and audio files

Individual evidence

  1. a b Nobel-Winning Scientist Isamu Akasaki Dies at 92 on nippon.com from April 2, 2021
  2. a b Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu and Isamu Akasaki, "P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)", Jpn. J. Appl. Phys. Vol. 28 (1989) L2112-L2114, doi : 10.1143 / JJAP.28.L2112
  3. IEEE Edison Medal Recipients (PDF; 151 kB) IEEE. Retrieved February 23, 2011.
  4. Isamu Akasaki, Hiroshi Amano, "Breakthroughs in Improving Crystal Quality of GaN and Invention of the p – n Junction Blue-Light-Emitting Diode", Jpn. J. Appl. Phys. Vol. 45 (2006) 9001-9010, doi : 10.1143 / JJAP.45.9001
  5. [ https://doi.org/10.1063/1.96549 Applied Physics Letters, Volume 48, Issue 5, pp. 353-355]