Joachim Burghartz

Joachim N. Burghartz (born October 4, 1956 in Aachen ) is a German electrical engineer and university professor .

Life

Joachim Burghartz studied electrical engineering at RWTH Aachen University from 1976 to 1982 . In 1987 he did his doctorate on lateral magnetotransistors at the University of Stuttgart . From 1987 to 1988 Burghartz worked as a visiting scholar at the IBM Thomas J. Watson Research Center in the United States , where he then worked as a research fellow. At IBM Research, he initially researched selective silicon epitaxy, then developed integration technologies for bipolar transistors and contributed significantly to the development of IBM's SiGe HBT technology. Later he worked on integrated passive high frequency components and in particular on integrated coils in silicon technologies.

In 1998, Burghartz switched to a university professorship at the TU Delft in the Netherlands, where he continued his work on silicon technologies for high frequency applications. From 2001 to 2005 he was Scientific Director of the DIMES research institute at the TU Delft.

In 2005, Burghartz returned to Germany and has since headed the Institute for Microelectronics Stuttgart (IMS CHIPS) and is a university professor for microelectronics at the University of Stuttgart. At IMS CHIPS, among other things, he works on technologies and construction technology for ultra-thin chips for applications in flexible electronics.

Memberships and honors (selection)

As the second German and European researcher - after Adolf Goetzberger in 1983 - Burghartz was awarded the JJ Ebers Award of the American IEEE Electron Devices Society in 2014 for his achievements in the development of integrated coils on silicon chips and for his work on ultra-thin chips excellent. In 2009 he received the Baden-Württemberg State Research Prize for his research and exploitation results on ultra-thin chips. Joachim Burghartz has been a Fellow of the IEEE since 2002.

Publications (selection)

• GL Patton et al., 75 GHz f-sub-T SiGe-Base Heterojunction Bipolar Transistors , IEEE Electron Device Letters, vol. 11, no. 4, pp. 171-173, April 1, 1990 (1990)
• Sub-30 ps ECL Circuits Using High-f-sub-T Si and SiGe Epitaxial Base Transistors , in Tech. Dig. International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December 1, 1990, pp. 297-300 (1990)
• Identification of Perimeter Depletion and Emitter Plug Effects in Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors , IEEE Transactions on Electron Devices, vol. 39, no. 6, pp. 1477-1489, June 1, 1992 (1992)
• APCVD-Grown Self-Aligned SiGe-Base HBTs (Invited), in Proc. of IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM), Minneapolis, MN, USA, (Invited), September 1, 1993, pp. 55-62 (1993)
• High-Q Inductors in Standard Silicon Interconnect Technology and Application to an Integrated RF Power Amplifier , in Tech. Dig. International Electron Devices Meeting (IEDM), Washington, USA, December 1, 1995, pp. 1015-1018 (1995)
• Integrated RF Components in a SiGe Bipolar Technology , IEEE Journal of Solid-State Circuits, vol. 32, no. 9, pp. 1440-1445, September 1, 1997 (1997)
• B. Rong et al., Surface-Passivated High-Resistivity Silicon Substrates for RF-IC’s , IEEE Electron Device Letters, vol. 25, no. 4, pp. 176-178, April, 2004, ISSN  0741-3106 (2004)
• Y. Zhuang et al., Shape-induced ultra-high magnetic anisotropy and ferromagnetic resonance frequency in micropatterned thin NiFe film , Journal of Applied Physics, vol. 99, no.8, p. 08C705, 2006 (2006)
• M. Zimmermann et al., A Seamless Ultra-Thin Chip Fabrication and Assembly Process , in Tech. Dig. International Electron Devices Meeting (IEDM), San Francisco, CA, USA, December, 2006, pp. 1010-1012, ISBN 1-4244-0439-8 (2006)
• CMOS Imager Technologies for Biomedical Applications (Invited), in ISSCC Digest of Technical Papers, International Solid-State Circuits Conference 2008, San Francisco, CA, USA, (talk), Session 7 / TD: Electronics for Life Scienses / 7.4, invited, February 4, 2008, pp. 142-143, ISBN 978-1-4244-2011-7 (2008)
• Ultra-Thin Chips and Related Applications, A New Paradigm in Silicon Technology (Plenary Invited Talk), in Proc. of ESSDERC, Athens, Greece, 2009, pp. 29-36.
• EA Angelopoulos et al., Ultra-Thin Chip Technology for System-in-Foil Applications , in Tech. Dig. International Electron Devices Meeting (IEDM), San Francisco, CA, USA, (talk), December 6, 2010, pp. 2.5.1-2.5.4, ISBN 978-1-4424-7418-5 , ISSN  0163-1918 (2010)
• T. Zaki, et al., A 3.3V 6b 100kS / s Current-Steering D / A Converter Using Organic Thin-Film Transistors on Glass , in Dig. of Tech. Papers ISSCC 2011, San Francisco, CA, USA, 2011, vol. 54, pp. 324-325.
• S. Endler et al., Two-Dimensional Flex Sensor Exploiting Stacked Ultrathin Chips , IEEE Electron Device Letters, vol. 33, no. 3, pp. 444–446, January 10, 2012 (2012)
• T. Zaki et al., S-Parameter Characterization of Submicrometer Low-Voltage Organic Thin-Film Transistors , IEEE Electron Device Letters, vol. 34, no. 4, pp. 520-522, April, 2013 (2013)
• C. Harendt, et al., Hybrid Systems in Foil (HySiF) Exploiting Ultra-thin Flexible Chips , in Proc. of ESSDERC, Venice, Italy, 2014, no.IEEE Catalog Number: CFP14543-PRT, pp. 210-213.
• Y. Mahsereci, et al., An Ultra-Thin Flexible CMOS Stress Sensor Demonstrated on an Adaptive Robotic Gripper , in Dig. of Tech. Papers ISSCC 2015, San Francisco, USA, 2015, pp. 1-3.

Literature (selection)

• Guide to State-of-the-Art Electron Devices , Joachim N., Burghartz, ed.Chichester, West Sussex, United Kingdom: John Wiley & Sons Ltd., Apr., 2013.
• Make Way for Flexible Silicon Chips , IEEE Spectrum, vol. 03 2013, 2013, Feb. 25.
• Ultra-thin Chip Technology and Applications , Joachim N. Burghartz, ed. Berlin, Germany: Springer, 2010, Dec. 12.
• De grote en kleine wereld van beeldsensoren , Bits & Chips, 2007, Sep. 28.
• Quo vadis microelectronics? , Delft, The Netherlands, Intreerede, June 30, 2000, ISBN 90-9014063-8 , p. 32 (2000)
• Passive Components, The Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy , JD Cressler, ed., Boca Raton, USA, CRC Press, July 1, 2005, Book chapter 3.4, ISBN 0-8493-3559-0 , pp. 249-263 (2005)

Individual evidence

1. ↑ http://www.sciencedirect.com/science/article/pii/0250687487850072
2. ↑ http://domino.research.ibm.com/tchjr/journalindex.nsf/9fe6a820aae67ad785256547004d8af0/50aa11b650eddcdb85256bfa0067fb05!OpenDocument
3. ↑ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=237171&action=search&sortType=&rowsPerPage=&searchField=Search_All&matchBoolean=true&queryText=((%22Authors%22:Burghartz)%20AND%20sige)
4. ↑ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1202600&action=search&sortType=&rowsPerPage=&searchField=Search_All&matchBoolean=true&queryText=((((%22Authors%22:Burghartz)20 % 22Document% 20Title% 22: on% 20the% 20design)
5. ↑ http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1463354&action=search&sortType=&rowsPerPage=&searchField=Search_All&matchBoolean=true&queryText=((((%22Authors%22:Burghartz)20ordelft20%20ind%) )
6. ↑ http://www.tudelft.nl/en/current/latest-news/article/detail/delftse-microelektronica-en-nanotechnologie-worden-versterkt/
7. ↑ http://www.ims-chips.de/home.php?id=a1b4c2de&adm=
8. ↑ http://www.ines.uni-stuttgart.de/burghartz/index.html
9. ↑ http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7333530
10. ↑ Archived copy ( Memento of the original dated February 3, 2014 in the Internet Archive ) Info: The archive link was inserted automatically and not yet checked. Please check the original and archive link according to the instructions and then remove this notice. 
11. ↑ List of the winners of the Baden-Württemberg State Research Prize ( Memento of the original from March 4, 2016 in the Internet Archive ) Info: The archive link was inserted automatically and has not yet been checked. Please check the original and archive link according to the instructions and then remove this notice. (PDF)  
12. ↑ http://eds.ieee.org/images/files/Awards/Fellows/2002_EDS_Fellows.pdf