Spin transistor
The spin transistor , abbreviated to spin FET , is a group of special field effect transistors (FET) which use the quantum mechanical property of the spin of electrons in the context of the Rashba effect . Conventional field effect transistors, which are components of electronics , only use the electrical charge to store information and to amplify electrical signals.
Spin transistors are assigned to spintronics , a branch of nanotechnology , and are used in existing applications for non-volatile information storage in special memories such as magnetoresistive random access memory (MRAM).
First work on spin transistors took place in the 1990s at Bell Laboratories . Spin transistors are part of various research projects in the basic sector of semiconductor technology , but have so far not been able to establish themselves in economically important applications.
Individual evidence
- ↑ US Patent 5432373 , Magnetic spin transistor , Bell Labs, 1995
- ↑ Nonmagnetic semiconductor spin transistor ( Memento of the original from July 4, 2010 in the Internet Archive ) Info: The archive link was automatically inserted and not yet checked. Please check the original and archive link according to the instructions and then remove this notice. (PDF; 224 kB), University of Iowa, 2003
- ^ High current gain silicon-based spin transistor , University of Southampton, 2007
- ↑ US patent 6218718 ( page no longer available , search in web archives ) Info: The link was automatically marked as defective. Please check the link according to the instructions and then remove this notice. , Spin transistor , 1999
