Boron phosphide
| Crystal structure | ||||||||||||||||
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| __ B 3+ __ P 3− | ||||||||||||||||
| Crystal system |
Zinc cover |
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| Space group |
F 4 3 m (No. 216) |
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| General | ||||||||||||||||
| Surname | Boron phosphide | |||||||||||||||
| Ratio formula | BP | |||||||||||||||
| Brief description |
colorless or, depending on the doping, orange-red to red-brown crystals |
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| properties | ||||||||||||||||
| Molar mass | 41.78 g mol −1 | |||||||||||||||
| Physical state |
firmly |
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| Melting point |
1227 ° C (decomposition) |
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| safety instructions | ||||||||||||||||
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| As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions . | ||||||||||||||||
Boron phosphide (BP) is a III-V compound semiconductor with a zincblende structure consisting of the two elements boron and phosphorus and was synthesized in 1891.
Extraction and presentation
Boron phosphide can be synthesized from the elements at pressures and temperatures above 20 kbar and 1200 ° C. Crystals of boron phosphide can further be synthesized using mixtures of boron, phosphorus and boron trioxide , boron and boron phosphate, and boron and phosphorus pentoxide .
properties
The semiconductor material has a band gap of 2.1 eV at 300 K on. Highly pure boron phosphide is optically transparent. n-doped boron phosphide has an orange-red color, p-doped boron phosphide is dark red-brown.
use
Boron phosphide is used, among other things, as a material in special light-emitting diodes (LEDs).
Individual evidence
- ^ A b c Jean d'Ans, Ellen Lax, Roger Blachnik: Pocket book for chemists and physicists . Springer, 1998, ISBN 3-642-58842-5 , pp. 320 ( limited preview in Google Book search).
- ↑ a b L.I. Berger: Semiconductor Materials . CRC Press, 1996, ISBN 978-0-8493-8912-2 , p. 116.
- ↑ This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.
- ↑ P. Popper, TA Ingles: Boron Phosphide, a III – V Compound of Zinc Blende Structure. In: Nature. 179, 1957, pp. 1075-1075, doi : 10.1038 / 1791075a0 .
- ↑ H. Moissan: Preparation et Propriétés des Phosphures de Bore . In: Comptes Rendus . 113, 1891, pp. 726-729.
- ↑ KP Ananthanarayanan, C. Mohanty, PJ Gielisse: Synthesis of single crystal boron phosphide. In: Journal of Crystal Growth. 20, 1973, pp. 63-67, doi : 10.1016 / 0022-0248 (73) 90038-9 .
- ^ O. Madelung: Semiconductors: Data Handbook . Birkhäuser, 2004, ISBN 978-3-540-40488-0 , pp. 84-86.
- ↑ Patent US6809346 : Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode. Filed March 9, 2004 , published October 26, 2004 , inventor: Takashi Udagawa.