Gallium antimonide
Crystal structure | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
__ Ga 3+ __ Sb 3− | ||||||||||||||||
General | ||||||||||||||||
Surname | Gallium antimonide | |||||||||||||||
Ratio formula | GaSb | |||||||||||||||
Brief description |
odorless, black-gray solid with a metallic sheen |
|||||||||||||||
External identifiers / databases | ||||||||||||||||
|
||||||||||||||||
properties | ||||||||||||||||
Molar mass | 191.48 g mol −1 | |||||||||||||||
Physical state |
firmly |
|||||||||||||||
density |
5.61 g cm −3 |
|||||||||||||||
Melting point |
712 ° C |
|||||||||||||||
solubility |
almost insoluble in water |
|||||||||||||||
Refractive index |
3.8 |
|||||||||||||||
safety instructions | ||||||||||||||||
|
||||||||||||||||
As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions . Refractive index: Na-D line , 20 ° C |
The compound semiconductor gallium antimonide (GaSb) is a direct semiconductor with a band gap of 0.72 eV (300 K). It consists of the elements gallium (Ga) and antimony (Sb).
Extraction and presentation
Gallium antimonide can be obtained by melting together equivalent amounts of gallium and antimony in an indifferent atmosphere.
properties
As with most III-V semiconductors , the crystal structure is the zinc blende structure, the lattice constant is 6.09593 Angstroms , which corresponds to 3.53 · 10 22 atoms / cm 3 .
Unlike most other semiconductors, it is not possible to produce gallium antimonide in a semi-insulating manner. Namely, nominally undoped gallium antimonide has a natural p-conductivity (10 16 to 10 17 cm −3 ). The natural acceptor is still a topic of current discussion. A gallium vacancy or a gallium vacancy complex or a gallium atom on an antimony lattice site is believed to be possible as the cause. Gallium antimonide is diamagnetic.
use
GaSb is used for the production of optoelectronic components, such as. B. laser diodes with low threshold voltage, photodetectors with high quantum efficiency or high frequency components are of increasing importance.
Individual evidence
- ↑ a b c Georg Brauer (ed.), With the collaboration of Marianne Baudler a . a .: Handbook of Preparative Inorganic Chemistry. 3rd, revised edition. Volume II, Ferdinand Enke, Stuttgart 1978, ISBN 3-432-87813-3 , p. 862.
- ↑ a b GaSb - Basic Parameters at 300 K
- ↑ a b GaSb - Thermal and mechanical properties
- ↑ Material Safety Data Sheet: Gallium Antimonide ( Memento from October 20, 2013 in the Internet Archive ) ( MS Word ; 54 kB)
- ^ GaSb - Optical properties
- ↑ a b data sheet Gallium antimonide from Sigma-Aldrich , accessed on July 27, 2019 ( PDF ).
- ↑ Not explicitly listed in Regulation (EC) No. 1272/2008 (CLP) , but with the specified labeling it falls under the group entry antimony compounds, with the exception of the tetroxide (Sb2O4), pentoxide (Sb2O5), trisulphide (Sb2S3), pentasulphide (Sb2S5) and those specified elsewhere in this Annex in the Classification and Labeling Inventory of the European Chemicals Agency (ECHA), accessed on February 1, 2016. Manufacturers or distributors can expand the harmonized classification and labeling .
- ↑ Thomas Bauer: Thermophotovoltaics: Basic Principles and Critical Aspects of System Design. Springer, 2011, ISBN 978-3-6421-9964-6 , p. 67 ( limited preview in the Google book search).