Thomas F. German

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Thomas F. Deutsch (born April 24, 1932 in Vienna , † July 17, 2006 in Cambridge (Massachusetts) ) was an American applied physicist.

German studied at Cornell University with a bachelor's degree as a physics engineer in 1955 and at Harvard University with a master's degree in 1956 and a doctorate in applied physics in 1961. From 1960 he was at Raytheon , where he became a senior scientist. From 1974 to 1984 he was at the Lincoln Laboratory of the Massachusetts Institute of Technology and then in the Wellman Laboratory of the Massachusetts General Hospital . From 1987 he was also an Associate Professor in the Department of Dermatology at Harvard Medical School .

In the late 1970s and early 1980s, he and Daniel J. Ehrlich and Richard M. Osgood developed techniques for chemical etching of silicon with lasers and the deposition of metals and semiconductors in chip structures with laser-induced photodissociation.

Later he dealt with medical laser applications (optical diagnostic methods, laser-tissue interaction).

In 1991 he received the RW Wood Prize with Osgood and Ehrlich . He was a fellow of the American Physical Society , the IEEE, and the Optical Society of America .

Individual evidence

  1. Life data according to American Men and Women of Science , Thomson Gale 2004
  2. ^ Gloria Negri: Thomas Deutsch, 74; physicist pioneered uses for lasers. Obituary. In: Boston Globe . Retrieved February 1, 2016 .
  3. ^ Deutsch, Ehrlich, Osgood, Laser chemical technique for rapid direct writing of surface relief in silicon, Applied Physics Letters, Volume 38, 1981, pp. 1018-1020
  4. Ehrlich, Osgood, Deutsch, Laser microphotochemistry for use in solid-state electronics, IEEE Journal of Quantum Electronics, Volume 16, 1980, pp. 1233-1243
  5. ^ German, Ehrlich Osgood, Laser photodeposition of metal films with microscopic features, Applied Physics Letters, Volume 35, 1979, pp. 175-177
  6. Ehrlich, Osgood, Deutsch, Photodeposition of metal films with ultraviolet laser light, Journal of Vacuum Science and Technology, Volume 21, 1982, pp. 23-32