Aluminum antimonide
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| __ Al 3+ __ Sb 3− | |||||||||||||||||||
| General | |||||||||||||||||||
| Surname | Aluminum antimonide | ||||||||||||||||||
| Ratio formula | As B | ||||||||||||||||||
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| properties | |||||||||||||||||||
| Molar mass | 148.74 g mol −1 | ||||||||||||||||||
| Physical state |
firmly |
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| Melting point |
1050 ° C |
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| solubility |
almost insoluble in water |
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| MAK |
0.5 mg m −3 (antimony as dust) |
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| As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions . | |||||||||||||||||||
Aluminum antimonide is an intermetallic compound made of aluminum and antimony and is a III-V compound semiconductor . Aluminum antimonide is interesting as a potential material for solar cells . It can also be mixed with other III-V compound semiconductors. With these ternary semiconductors (for example AlInSb, AlGaSb and AlAsSb.) It is possible to better adapt the band gap to the solar spectrum.
properties
- Lattice constant : 0.61355 nm
- Debye temperature : 19 ° C
- Dielectric constant : 11
- indirect band gap : approx. 1.6 eV
- direct band gap: 2.22 eV
- Refractive index 3.3 (at 2 µm wavelength)
The mobility of the charge carriers at 300 K is:
- for electron conduction 200 cm 2 · V −1 · s −1 and
- the hole mobility 400 cm 2 · V −1 · s −1
Individual evidence
- ↑ a b c d e data sheet Aluminum antimonide, 99.99% (metals basis) from AlfaAesar, accessed on December 7, 2019 ( PDF )(JavaScript required) .
- ↑ Not explicitly listed in Regulation (EC) No. 1272/2008 (CLP) , but with the specified labeling it falls under the group entry antimony compounds, with the exception of the tetroxide (Sb2O4), pentoxide (Sb2O5), trisulphide (Sb2S3), pentasulphide (Sb2S5) and those specified elsewhere in this Annex in the Classification and Labeling Inventory of the European Chemicals Agency (ECHA), accessed on February 1, 2016. Manufacturers or distributors can expand the harmonized classification and labeling .