Boron arsenide

from Wikipedia, the free encyclopedia
Crystal structure
Crystal structure of boron arsenide
__ B 3+      __ As 3−
General
Surname
  • Boron arsenide (ambiguous)
  • Boron arsenide
Ratio formula BAs
Brief description

brown solid

External identifiers / databases
CAS number 12005-69-5
Wikidata Q866825
properties
Molar mass 85.733 g mol −1
Physical state

firmly

density

5.22 g cm −3

Melting point

1100 ° C (decomposition)

safety instructions
GHS hazard labeling
no classification available
As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Boron arsenide is a III-V compound semiconductor consisting of the two elements boron and arsenic . There are two different chemical compounds known under this name which have the empirical formula BAs and B 12 As 2 ( boron arsenide ).

Extraction and presentation

Boron arsenide can be obtained by reacting boron with arsenic at 1200 ° C under high pressure.

properties

Boron arsenide is a semiconductor with a zincblende structure and a band gap of 1.5 eV.

Individual evidence

  1. a b c d Dale L. Perry: Handbook of Inorganic Compounds, Second Edition . Taylor & Francis US, 2011, ISBN 1-4398-1462-7 , pp. 73 ( limited preview in Google Book search).
  2. This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.
  3. Jiro Osugi, Kiyoshi Shimizu, Yoshiyuki Tanaka, Kosaku Kadono: Preparation and chemical properties of cubic boron arsenide, BAs. In: The Review of Physical Chemistry of Japan , Vol. 36, No. 1, 1966.
  4. ^ AF Holleman , E. Wiberg , N. Wiberg : Textbook of Inorganic Chemistry . 101st edition. Walter de Gruyter, Berlin 1995, ISBN 3-11-012641-9 , p. 1053.
  5. GLW Hart, A. Zunger: Electronic Structure of BAs and Boride III-V Alloys . In: Physical Review B . 62, No. 20, 2000, pp. 13522-13537. arxiv : cond-mat / 0009063 . doi : 10.1103 / PhysRevB.62.13522 .