Boron arsenide
Crystal structure | |||||||
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__ B 3+ __ As 3− | |||||||
General | |||||||
Surname |
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Ratio formula | BAs | ||||||
Brief description |
brown solid |
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properties | |||||||
Molar mass | 85.733 g mol −1 | ||||||
Physical state |
firmly |
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density |
5.22 g cm −3 |
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Melting point |
1100 ° C (decomposition) |
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safety instructions | |||||||
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As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions . |
Boron arsenide is a III-V compound semiconductor consisting of the two elements boron and arsenic . There are two different chemical compounds known under this name which have the empirical formula BAs and B 12 As 2 ( boron arsenide ).
Extraction and presentation
Boron arsenide can be obtained by reacting boron with arsenic at 1200 ° C under high pressure.
properties
Boron arsenide is a semiconductor with a zincblende structure and a band gap of 1.5 eV.
Individual evidence
- ↑ a b c d Dale L. Perry: Handbook of Inorganic Compounds, Second Edition . Taylor & Francis US, 2011, ISBN 1-4398-1462-7 , pp. 73 ( limited preview in Google Book search).
- ↑ This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.
- ↑ Jiro Osugi, Kiyoshi Shimizu, Yoshiyuki Tanaka, Kosaku Kadono: Preparation and chemical properties of cubic boron arsenide, BAs. In: The Review of Physical Chemistry of Japan , Vol. 36, No. 1, 1966.
- ^ AF Holleman , E. Wiberg , N. Wiberg : Textbook of Inorganic Chemistry . 101st edition. Walter de Gruyter, Berlin 1995, ISBN 3-11-012641-9 , p. 1053.
- ↑ GLW Hart, A. Zunger: Electronic Structure of BAs and Boride III-V Alloys . In: Physical Review B . 62, No. 20, 2000, pp. 13522-13537. arxiv : cond-mat / 0009063 . doi : 10.1103 / PhysRevB.62.13522 .