Gallium (II) telluride
Crystal structure | ||||||||||||||||
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__ Ga __ Te α-Gallium (II) telluride |
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General | ||||||||||||||||
Surname | Gallium (II) telluride | |||||||||||||||
other names |
Gallium monotelluride |
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Ratio formula | GaTe | |||||||||||||||
Brief description |
black solid |
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External identifiers / databases | ||||||||||||||||
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properties | ||||||||||||||||
Molar mass | 197.32 g mol −1 | |||||||||||||||
Physical state |
firmly |
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density |
5.751 g cm −3 |
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Melting point |
824 ° C |
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solubility |
almost insoluble in water |
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safety instructions | ||||||||||||||||
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As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions . |
Gallium (II) telluride is an inorganic chemical compound of gallium from the telluride group and, along with gallium (III) telluride, one of the well-known gallium tellurides.
Extraction and presentation
Gallium (II) telluride can be obtained by reacting gallium with tellurium .
properties
Gallium (II) telluride is a solid that is in the form of black, soft, greasy, shiny and easily friable flakes. It occurs in a total of four different crystal structures , the two main forms being a monoclinic crystal structure with the space group C 2 / m (space group no. 12) , the so-called α-GaTe, or a hexagonal crystal structure with the space group P 6 3 / mmc (No. 194) , the so-called β-GaTe. In the α-form, each gallium atom is bound to a further gallium and three tellurium atoms, so that a tetrahedral environment results. Each tellurium atom is bound to three gallium atoms in the form of a trigonal pyramid, resulting in a layered structure. The other forms are monoclinic, but come in four different forms. The β form is metastable and changes to the α form at high temperatures. The compound is a semiconductor and exhibits photoluminescence at 730 nm.
use
Gallium (II) telluride is used in the semiconductor industry.
Individual evidence
- ↑ a b c d e data sheet Gallium (II) telluride, 99.999% (metals basis) from AlfaAesar, accessed on March 11, 2014 ( PDF )(JavaScript required) .
- ↑ a b c d Georg Brauer , with the assistance of Marianne Baudler a . a. (Ed.): Handbook of Preparative Inorganic Chemistry . 3rd, revised edition. tape I . Ferdinand Enke, Stuttgart 1975, ISBN 3-432-02328-6 , pp. 861 .
- ^ V. Grasso: Electronic Structure and Electronic Transitions in Layered Materials . Springer, 1986, ISBN 90-277-2102-5 , pp. 232 ( limited preview in Google Book search).
- ↑ NN Kolesnikov, EB Borisenko, DN Borisenko, AV Timonina: Structure and microstructure of GaTe crystals grown by high-pressure vertical zone melting. In: Journal of Crystal Growth. 365, 2013, pp. 59-63, doi : 10.1016 / j.jcrysgro.2012.11.038 .
- ^ Edward D. Palik: Handbook of Optical Constants of Solids . Academic Press, 1998, ISBN 0-12-544423-0 , pp. 489 ( limited preview in Google Book search).
- ↑ a b 2D Semiconductors: Single Crystal Gallium Telluride (GaTe) , accessed on Tuesday, March 11, 2014