Zirconium disilicide

Crystal structure
	__ Zr __ Si
General
Surname	Zirconium disilicide
other names	Zirconium disilicide; Zirconium silicide (ambiguous);
Ratio formula	ZrSi 2
Brief description	gray odorless solid
External identifiers / databases
EC number	234-911-1
ECHA InfoCard	100,031,725
PubChem	6336892
Wikidata	Q8072751
properties
Molar mass	147.39 g mol −1
Physical state	firmly
density	4.88 g cm −3
Melting point	1520 ° C
safety instructions
GHS labeling of hazardous substances	no GHS pictograms
	no GHS pictograms
H and P phrases	H: no H-phrases
	P: no P-phrases
	As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Zirconium disilicide is an inorganic chemical compound of zirconium from the group of silicides .

Extraction and presentation

Zirconium disilicide can be obtained by reacting zirconium or zirconium hydride with silicon .

{\ displaystyle \ mathrm {Zr + 2 \ Si \ longrightarrow ZrSi_ {2}}}

It is also possible to display it by reacting zirconium with silicon tetrachloride .

It is also formed when zirconia reacts with silicon.

{\ displaystyle \ mathrm {3 \ Si + ZrO_ {2} \ longrightarrow ZrSi_ {2} + SiO_ {2}}}

properties

Zirconium disilicide is a metallic, shiny, gray and odorless crystalline solid with good thermal and electrical conductivity. It has an orthorhombic crystal structure with the space group Cmcm (space group no. 63) . The crystal structure contains two crystallographically different silicon atoms. One forms layers of Si ₄ squares, the other zigzag chains. Silicon disilicide is insoluble in water and mineral acids with the exception of hydrofluoric acid . It burns when it glows in air. It should be noted that in addition to zirconium disilicide, other zirconium silicides are known. So Zr ₃ Si with a tetragonal crystal structure isotype to that of Ti ₃ P, Zr ₂ Si with a melting point of 2110 ° C, a density of 6.22 and a tetragonal crystal structure isotype to that of CuAl ₂ , Zr ₃ Si ₂ with a melting temperature of 2225 ° C and a tetragonal crystal structure isotype to that of U ₃ Si ₂ , Zr ₅ Si ₄ with a tetragonal crystal structure and zirconium monosilicide ZrSi with a melting temperature of 2095 ° C and two orthorhombic forms isotype to those of iron boride or chromium boride . Template: room group / 63

use

Zirconium disilicide is used in the semiconductor industry as a sputtering material for the production of resistant layers in electronic circuits.

Individual evidence

↑ ^a ^b ^c ^d ^e ^f data sheet Zirconium silicide, 99.5% (metals basis excluding Hf), Hf 2-4% from AlfaAesar, accessed on June 16, 2013 ( PDF )(JavaScript required) .
↑ ^a ^b ^c ^d Georg Brauer (Ed.), With the collaboration of Marianne Baudler a . a .: Handbook of Preparative Inorganic Chemistry. 3rd, revised edition. Volume II, Ferdinand Enke, Stuttgart 1978, ISBN 3-432-87813-3 , p. 1389.
↑ Satischandra B. Ogale: Thin Films and Heterostructures for Oxide Electronics . Springer, 2005, ISBN 0-387-25802-7 , pp. 38 ( limited preview in Google Book search).
^ Dale L. Perry: Handbook of Inorganic Compounds, Second Edition . Taylor & Francis US, 2011, ISBN 1-4398-1462-7 , pp. 475 ( limited preview in Google Book search).

[Alfa-1] ↑ ^a ^b ^c ^d ^e ^f data sheet Zirconium silicide, 99.5% (metals basis excluding Hf), Hf 2-4% from AlfaAesar, accessed on June 16, 2013 ( PDF )(JavaScript required) .

[brauer-2] Georg Brauer (Ed.), With the collaboration of Marianne Baudler a . a .: Handbook of Preparative Inorganic Chemistry. 3rd, revised edition. Volume II, Ferdinand Enke, Stuttgart 1978, ISBN 3-432-87813-3 , p. 1389.

[Satischandra_B._Ogale-3] Satischandra B. Ogale: Thin Films and Heterostructures for Oxide Electronics . Springer, 2005, ISBN 0-387-25802-7 , pp. 38 ( limited preview in Google Book search).

[Dale_L._Perry-4] Dale L. Perry: Handbook of Inorganic Compounds, Second Edition . Taylor & Francis US, 2011, ISBN 1-4398-1462-7 , pp. 475 ( limited preview in Google Book search).