Alan B. Fowler

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Alan B. Fowler (born October 15, 1928 in Denver , Colorado ) is an American solid-state physicist . He was part of the team that succeeded in detecting a two-dimensional electron gas and its quantum properties in semiconductors in 1966 .

Fowler did military service in the US Army from 1946 to 1948 and 1952/53 , where he worked at the Signal Corps laboratory in Camp Evans , New Jersey . He studied at the Rensselaer Polytechnic Institute with a bachelor's degree in 1951 and a master's degree in 1952. He then carried out research at Raytheon from 1953 (while simultaneously working on his doctorate at Harvard) and from 1958 at IBM . In 1958 he received his PhD in Applied Physics from Harvard University . He became an IBM Fellow , held various management positions at IBM and officially retired from IBM in 1993 (Emeritus status).

In 1956 John Robert Schrieffer predicted quantum effects in electron transport due to the two-dimensional geometry in metal-insulator-semiconductor (MOS) structures , but this was only proven by Fowler, Frank Fang , Phillip J. Stiles and Webster Eugene Howard (* 1934) at IBM in 1966 by applying strong magnetic fields.

In 1988 he received the Oliver E. Buckley Condensed Matter Prize with Frank Fang and Phillip J. Stiles . In 1981 he received the Wetherill Medal from the Franklin Institute with Fang, Howard, Stiles and Frank Stern . In 1990 he became a Fellow of the National Academy of Sciences and he is a Fellow of the National Academy of Engineering , the American Academy of Arts and Sciences and an external member of the Royal Society . He is also an IEEE Fellow and Fellow of the American Physical Society .

Web links

  • Biography at the AIP
  • Alan B. Fowler: The Long-Reaching Influence of Arthur von Hippel: Interdisciplinarity and Semiconductors . In: MRS Bulletin . tape 30 , no. 11 , 2005, p. 854–857 , doi : 10.1557 / mrs2005.274 (Contains a brief biography of the author Alan B. Fowler).

Individual evidence

  1. AB Fowler, FF Fang, WE Howard, PJ Stiles: Magneto-Oscillatory Conductance in Silicon Surfaces . In: Physical Review Letters . tape 16 , no. 20 , May 16, 1966, pp. 901-903 , doi : 10.1103 / PhysRevLett.16.901 .