Dov Frohman

Dov Frohman ( Hebrew דב פרוהמן), also Dov Frohman-Bentchkowsky, (born March 28, 1939 in Amsterdam ) is an Israeli electrical engineer and inventor of EPROM .

Dov Frohman

Frohman's parents had emigrated to the Netherlands from Poland before anti-Semitic persecution. During World War II his parents died in the Holocaust while he was being hidden by Dutch people. In 1949 he emigrated to Israel, grew up in Tel Aviv and studied electrical engineering from 1959 at the Technion with a degree in 1963 and at the University of California, Berkeley , with a master’s degree in 1965. First he worked at Fairchild Semiconductor , where he worked Metal-Insulator-Semiconductor Structures , earned his Ph.D. in Berkeley and followed Gordon Moore and the other Intel founders into the newly founded company. There he developed the EPROM in 1970. In 1973 he left Intel temporarily and taught at the University of Kumasi in Ghana , but returned to Israel in 1974 and taught at the School of Applied Science at the Hebrew University (of which he was later director). He also helped establish a small Intel design center in Haifa (1974) and became the founder and director of Intel Israel in 1985. In 2001 he retired.

In 2009 he was inducted into the National Inventors Hall of Fame . In 2008 he received the IEEE Edison Medal , in 1986 the IEEE Jack Morton Award and in 1991 the Israel Prize . He is a member of the Israel Academy of Sciences. He is a fellow of the IEEE . Frohman holds 6 US patents. He is an honorary doctor of the Technion.

In 2018 Frohman became a Fellow of the Computer History Museum .

Fonts

• with Robert Howard: Leadership the hard way. Jossey-Bass, San Francisco 2008, ISBN 978-0-470-26768-4 .

Web links

• Oral History Interview, Computer History Museum, pdf
• IEEE Global History Network

Individual evidence

1. ↑ Dov Frohman-Bentchkowsky: A circuit model for the step recovery diode . MS Thesis (in Engineering), University of California, Berkeley. 1965, OCLC 20123955 .
2. ↑ Dov Frohman-Bentchkowsky: Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures and its memory applications . Ph. D. Thesis (Engineering), University of California, Berkeley. 1969, OCLC 20214296 .