Robert H. Dennard

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Robert H. Dennard

Robert Heath Dennard (born September 5, 1932 in Terrell , Texas , USA) is an American electrical engineer and inventor.

life and work

Dennard studied electrical engineering at Southern Methodist University in Dallas . There he received a BS degree in 1954 and an MS degree in electrical engineering in 1956 . He then went to the Carnegie Institute of Technology in Pittsburgh , Pennsylvania, where he in 1958 received his doctorate ( Ph.D. ). He then took a position in the research department at International Business Machines (IBM).

At IBM he researched new components and circuits for logic and memory applications. His most important contributions in this area include the invention of dynamic RAM (DRAM, Dynamic Random Access Memory ) in 1966. DRAM technology was a major technological leap for electronic information storage and processing. Until today (2010) it is one of the most important components in the computer . In addition, he was one of the first scientists to see the enormous potential of shrinking MOSFETs. In 1974, together with colleagues, he formulated a “scaling theory” for MOSFET - a field effect transistor variant. This is closely related to Moore's law and the development of microelectronics in recent decades.

Awards and honors

Dennard has received a large number of awards and honors over the course of his life. The most important are:

Web links

  • Robert Dennard. In: IEEE History Center. IEEE, archived from the original on May 18, 2006 ; accessed on May 1, 2010 (English).
  • Random Access Memory. In: Inventor of the Week Archive. Massachusetts Institute of Technology, March 2000, accessed May 1, 2010 .

Individual evidence

  1. ^ Robert Dennard: A design of an electronic analog computer for educational use . 1956, OCLC 26689446 (Masters thesis at Southern Methodist University).
  2. ^ Robert Dennard: Behavior of the ferroresonant series circuit containing a square-loop reactor . 1958, OCLC 227253865 (Dissertation at Carnegie Institute of Technology).
  3. Random Access Memory. In: Inventor of the Week Archive. Massachusetts Institute of Technology, March 2000, accessed May 1, 2010 .
  4. Patent US3387286 : Field-effect transistor memory. Published June 4, 1968 , inventor: Robert H. Dennard.
  5. RH Dennard, FH Gaensslen, HN Yu, VL Rideout, E. Bassous, AR Leblanc: Design of ion-implanted MOSFETs with very small physical dimensions. In: IEEE Journal of Solid State Circuits. SC-9, No. 5, 1974, pp. 256-268 ( PDF , accessed May 1, 2010).
  6. ^ The Impact of Dennard's Scaling Theory. In: IEEE solid-state circuits society news. Vol. 12, No. 1, 2007 (the whole issue deals more or less with the topic, PDF , accessed on May 1, 2010).
  7. ^ Members: Robert H. Dennard. National Academy of Engineering, accessed July 12, 2018 .
  8. ^ National Medal Winner. In: clinton4.nara.gov. White House Millenium Council 2000, accessed November 25, 2014 .
  9. ^ Member History: Robert H. Dennard. American Philosophical Society, accessed July 12, 2018 (English, with short biography).
  10. 2009 - Robert N. Dennard . IEEE Medal of Honor Recipients, accessed May 1, 2010.
  11. ^ Robert H. Dennard, Ph.D. ( Memento of the original from October 12, 2007 in the Internet Archive ) Info: The @1@ 2Template: Webachiv / IABot / www.fi.edu archive link was inserted automatically and has not yet been checked. Please check the original and archive link according to the instructions and then remove this notice. . Franklin Laureate Database, 2007, accessed May 1, 2010.