Indium phosphide

Crystal structure
	__ In 3+ __ P 3−
General
Surname	Indium phosphide
other names	Indium (III) phosphide
Ratio formula	InP
Brief description	dark gray solid
External identifiers / databases
EC number	244-959-5
ECHA InfoCard	100.040.856
PubChem	31170
Wikidata	Q416291
properties
Molar mass	145.79 g mol −1
Physical state	firmly
density	4.79 g cm −3
Melting point	1070 ° C
solubility	practically insoluble in water
safety instructions
GHS hazard labeling from Regulation (EC) No. 1272/2008 (CLP) , expanded if necessary danger
H and P phrases	H: 350-361f-372
	P: 201-202-260-264-280-308 + 313
MAK	repealed as carcinogenic
	As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Indium phosphide is a semiconductor compound from the group of binary III-V compound semiconductors , which is used in high-frequency technology for lasers for low - attenuation long-range data communication around 1550 nm via fiber optic cables , in high-performance electronics and the production of integrated circuits ( sandwich chips ) with clock frequencies up to 1 THz and above and is used in components in the field of high-frequency technology such as the Gunn diode . The reason for these areas of application is the very high electron mobility in the lattice compared to silicon .

Indium phosphide has a direct band gap , which makes the compound well suited for laser diodes , LEDs , detectors and other applications in the field of optoelectronics . Indium phosphide is also suitable as a base material for photonic crystals .

Occurrence

Indium phosphide is an artificially produced compound. In contrast to phosphorus , indium is a rare element of the two components .

Extraction and presentation

InP-based component layers are currently usually grown on InP substrates, which are produced as single crystals, by means of organometallic gas phase epitaxy . More rarely, methods based on molecular beam epitaxy are used, with which purer layers and higher quality interfaces can be realized.

Indium phosphide:
crystals
Indium phosphide:
polished side up
Nanocrystalline surface, electron microscope photo , the indium oxide areas that have grown are artificially colored.

properties

The temperature-dependent band gap has a value of 1.34 eV at 300 K (approx. 27 ° C) .

safety instructions

Indium phosphide is classified as carcinogenic.

Individual evidence

↑ ^a ^b ^c ^d ^e ^f Entry on indium phosphide in the GESTIS substance database of the IFA , accessed on January 8, 2020(JavaScript required) .
↑ ^a ^b data sheet indium phosphide at AlfaAesar, accessed on February 6, 2010 ( PDF )(JavaScript required) .
↑ Entry on indium phosphide in the Classification and Labeling Inventory of the European Chemicals Agency (ECHA), accessed on February 1, 2016. Manufacturers or distributors can expand the harmonized classification and labeling .
↑ Sandwich chips: The best of two technologies (PDF; 149 kB). Press release from the Ferdinand Braun Institute , December 18, 2012.
↑ Physical properties of indium phosphide (Engl.)

[GESTIS-1] ↑ ^a ^b ^c ^d ^e ^f Entry on indium phosphide in the GESTIS substance database of the IFA , accessed on January 8, 2020(JavaScript required) .

[alfa-2] ta sheet indium phosphide at AlfaAesar, accessed on February 6, 2010 ( PDF )(JavaScript required) .

[CLP_100.040.856-3] Entry on indium phosphide in the Classification and Labeling Inventory of the European Chemicals Agency (ECHA), accessed on February 1, 2016. Manufacturers or distributors can expand the harmonized classification and labeling .

[4] Sandwich chips: The best of two technologies (PDF; 149 kB). Press release from the Ferdinand Braun Institute , December 18, 2012.

[5] Physical properties of indium phosphide (Engl.)