Vadim Yevgenyevich Lashkarev

Vadim Jewgenjewitsch Laschkarjow ( Russian Вадим Евгеньевич Лашкарёв ; born October 7 ^{. Jul} / 20th October  1903 ^{. Greg} in Kiev ; † 1. December 1974 ) was a Ukrainian Semiconductors - physicist .

Life

Laschkarev, son of a lawyer , studied physics at the University of Kiev with a degree in 1924. He then began his scientific work in the Kiev Polytechnic Institute (KPI) with X-ray examinations and then led them in the newly founded Physics Institute of the Academy of Sciences of the Ukrainian Soviet Socialist Republic (AN-USSR) continued.

In 1930 he moved to the Physical-Technical Institute in Leningrad , the current Joffe Institute . Here he was the first in the Soviet Union to carry out electron diffraction experiments. He then received his doctorate in physical and mathematical sciences in 1935 without a dissertation . Despite his scientific merits, he was arrested in 1935 for participating in a spiritism group and, after three months of solitary confinement, sent to Arkhangelsk , where he headed the physics department of the medical institute.

In 1939 Lashkarev returned to Kiev as head of the physics department of the Physics Institute and began to deal with semiconductors . In 1941 he published his fundamental discovery of the semiconductor layer between the barrier layer and the electrode and the different charges of the charge carriers ( electrons and holes ) on both sides of the barrier layer in Cu2O - solar cells , silver sulfide - photocells and selenium rectifiers . With that he had discovered the pn junction .

During the German-Soviet War Laschkarev was evacuated to Ufa , where he built Cu ₂ O devices for defense. After the war he returned to Kiev and investigated the bipolar diffusion of photoelectrons and defective electrons in Cu ₂ O, the photoresistance of cadmium sulfide and cadmium selenide as well as germanium diodes and transistors .

In 1960 Laschkarjow founded the Institute for Semiconductor Physics of the AN-USSR (since 2002 WE Laschkarjow Institute for Semiconductor Physics ) in Kiev together with SI Pekar . In Kiev University he established a chair in semiconductor physics, and he was a member of the AN-USSR.

Individual evidence

1. ↑ ^{a b} History of Computing in Ukraine: Vadim Y. Lashkarev (accessed on May 22, 2016).
2. ↑ NN Bogolyubov, BM Vul, SG Kalashnikov, SI Pekar, É. I. Rashba, OV Snitko, KB Tolpygo, MK Sheinkman: Vadim Evgen'evich Lashkarev (obituary) . In: Sov. Phys. Usp. tape 18 , 1975, p. 842 , doi : 10.1070 / PU1975v018n10ABEH005232 .
3. ↑ VE Lashkaryov: Investigation of a barrier layer by the thermo-probe method . In: Ukr. J. Phys. tape 53 , 2008, p. 53-56 . ( ujp.bitp.kiev.ua ( Memento of the original from September 28, 2015 in the Internet Archive ) Info: The archive link has been inserted automatically and has not yet been checked. Please check the original and archive link according to the instructions and then remove this note. ). 
4. ^ The History of Development of Computer Science and Technologies in Ukraine (The European Virtual Computer Museum): The first steps in Microelectronics. Discovery of pn transiton in Semiconductors by Academician Vadim Lashkarev. (accessed on May 22, 2016).
5. ↑ VE Lashkaryov Institute of Semiconductor Physics NAS of Ukraine (accessed on 22 May 2016).