Jump to content

Russell Dupuis: Difference between revisions

From Wikipedia, the free encyclopedia
Browse history interactively
← Previous edit
Content deleted Content added
VisualWikitext
m →‎Education: hyphen vs en dash
 
(6 intermediate revisions by 4 users not shown)
Line 27: Line 27:
}}
}}


'''Russell Dean Dupuis''' (born 9 July 1947) is an American physicist.
'''Russell Dean Dupuis''' (born 9 July 1947) is an American electrical engineer and physicist.


He holds the Steve W. Chaddick Endowed Chair in Electro-Optics in the School of Electrical and Computer Engineering at [[Georgia Institute of Technology|Georgia Tech]]. He has made pioneering contributions to metalorganic chemical vapor deposition ([[MOCVD]]) and continuous-wave room-temperature quantum-well lasers.<ref name="IEEE">{{cite web|url=http://www.ieeeghn.org/wiki/index.php/Russell_Dean_Dupuis |title=Russell D. Dupuis |date=13 September 2017 |publisher=[[IEEE]]}}</ref> His other work has focused on III-V heterojunction devices, and [[LEDs]].
He holds the Steve W. Chaddick Endowed Chair in Electro-Optics in the School of Electrical and Computer Engineering at [[Georgia Institute of Technology|Georgia Tech]]. He has made pioneering contributions to metalorganic chemical vapor deposition ([[MOCVD]]) and continuous-wave room-temperature quantum-well lasers.<ref name="IEEE">{{cite web|url=http://www.ieeeghn.org/wiki/index.php/Russell_Dean_Dupuis |title=Russell D. Dupuis |date=13 September 2017 |publisher=[[IEEE]]}}</ref> His other work has focused on III-V heterojunction devices, and [[LEDs]].
Line 36: Line 36:
Dupuis earned his B.S. (1970), his M.S. (1971), and his Ph.D. (1972) in [[Electrical Engineering]] from the [[University of Illinois at Urbana–Champaign]].<ref name="IEEE"/>
Dupuis earned his B.S. (1970), his M.S. (1971), and his Ph.D. (1972) in [[Electrical Engineering]] from the [[University of Illinois at Urbana–Champaign]].<ref name="IEEE"/>


==Career History==
==Career history==


Prof. Dupuis initially worked at Texas Instruments from 1973 to 1975.
Prof. Dupuis initially worked at Texas Instruments from 1973 to 1975.
He joined Rockwell International in 1975, where he was the forerunner to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices.
He joined Rockwell International in 1975, where with P. Dan Dapkus, he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices such as lasers.
Then in 1979 he moved to AT&T Bell Laboratories in Murray Hill, NJ where with Ralph Logn, C.J. Pinzone & Jan van der Ziel, he was the first to demonstrate the direct growth of GaAs lasers directly on silicon that could operate CW at room temperature. He extended his work to the growth of InP-InGaAsP by MOCVD and demonstrated the first long wavelength VCSEL to operate at 1.55 micron wavelength. He moved to academia in 1989 to become a chaired professor at the University of Texas at Austin at the Microelectronics Center established by Ben G Streetman.
Next, in 1979 he moved to AT&T Bell Laboratories where he extended his work to the growth of InP-InGaAsP by MOCVD.
He moved to academia in 1989 to become a chaired professor at the University of Texas at Austin.

==Awards and memberships==
==Awards and memberships==
A Georgia Research Alliance Eminent Scholar, Dupuis and two of his colleagues were awarded the 2002 [[National Medal of Technology]] by President George W. Bush for their work on developing and commercializing [[LED]]s.<ref>{{cite web|title=President Bush Awards Georgia Tech Professor with National Medal of Technology|url=http://www.gatech.edu/news-room/release.php?id=210|date=2003-11-07|publisher=[[Georgia Institute of Technology]]|url-status=dead|archive-url=https://web.archive.org/web/20060905040502/http://www.gatech.edu/news-room/release.php?id=210|archive-date=2006-09-05}}</ref> He won the 1985 [[IEEE Morris N. Liebmann Memorial Award]]. In 2015, Dupuis and four others shared the [[Charles Stark Draper Prize]] in Engineering given by the U.S. [[National Academy of Engineering]].<ref>{{cite web|url=https://www.nae.edu/Activities/Projects/Awards/DraperPrize/DraperWinners/2015Draper/128637.aspx|title=Professor Russell Dupuis }}</ref> He is a member of the [[National Academy of Engineering]] and is a Fellow of the IEEE, the [[American Physical Society]], the [[American Association for the Advancement of Science]], and the [[Optical Society of America]].
A Georgia Research Alliance Eminent Scholar, Dupuis and two of his colleagues were awarded the 2002 [[National Medal of Technology]] by President George W. Bush for their work on developing and commercializing [[LED]]s.<ref>{{cite web|title=President Bush Awards Georgia Tech Professor with National Medal of Technology|url=http://www.gatech.edu/news-room/release.php?id=210|date=2003-11-07|publisher=[[Georgia Institute of Technology]]|url-status=dead|archive-url=https://web.archive.org/web/20060905040502/http://www.gatech.edu/news-room/release.php?id=210|archive-date=2006-09-05}}</ref> He won the 1985 [[IEEE Morris N. Liebmann Memorial Award]]. In 2015, Dupuis and four others shared the [[Charles Stark Draper Prize]] in Engineering given by the U.S. [[National Academy of Engineering]].<ref>{{cite web|url=https://www.nae.edu/Activities/Projects/Awards/DraperPrize/DraperWinners/2015Draper/128637.aspx|title=Professor Russell Dupuis }}</ref> He is a member of the [[National Academy of Engineering]] and is a Fellow of the IEEE, the [[American Physical Society]], the [[American Association for the Advancement of Science]], and the [[Optical Society of America]].
Line 52: Line 50:


==External links==
==External links==
*[http://www.ece.gatech.edu/faculty-staff/fac_profiles/bio.php?id=129 Official profile]
*[https://ece.gatech.edu/directory/russell-dean-dupuis Official profile]


{{IEEE Edison Medal Laureates 2001-2025}}
{{IEEE Edison Medal Laureates 2001-2025}}
Line 62: Line 60:
[[Category:Living people]]
[[Category:Living people]]
[[Category:American electrical engineers]]
[[Category:American electrical engineers]]
[[Category:Fellow Members of the IEEE]]
[[Category:Fellows of the IEEE]]
[[Category:Members of the United States National Academy of Engineering]]
[[Category:Members of the United States National Academy of Engineering]]
[[Category:National Medal of Technology recipients]]
[[Category:National Medal of Technology recipients]]
Line 71: Line 69:
[[Category:Fellows of the American Physical Society]]
[[Category:Fellows of the American Physical Society]]
[[Category:Fellows of Optica (society)]]
[[Category:Fellows of Optica (society)]]
[[Category:Benjamin Franklin Medal (Franklin Institute) laureates]]

Latest revision as of 23:25, 1 May 2024

Russell Dean Dupuis
Born1947 (age 76–77)
NationalityAmerican
AwardsIEEE Edison Medal (2007)
Scientific career
FieldsElectrical engineering
Doctoral advisorNick Holonyak Jr.

Russell Dean Dupuis (born 9 July 1947) is an American electrical engineer and physicist.

He holds the Steve W. Chaddick Endowed Chair in Electro-Optics in the School of Electrical and Computer Engineering at Georgia Tech. He has made pioneering contributions to metalorganic chemical vapor deposition (MOCVD) and continuous-wave room-temperature quantum-well lasers.[1] His other work has focused on III-V heterojunction devices, and LEDs.

Dupuis was elected as a member into the National Academy of Engineering in 1989 for pioneering work in metalorganic chemical vapor deposition and demonstration of heterostructure devices.

Education[edit]

Dupuis earned his B.S. (1970), his M.S. (1971), and his Ph.D. (1972) in Electrical Engineering from the University of Illinois at Urbana–Champaign.[1]

Career history[edit]

Prof. Dupuis initially worked at Texas Instruments from 1973 to 1975. He joined Rockwell International in 1975, where with P. Dan Dapkus, he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices such as lasers. Then in 1979 he moved to AT&T Bell Laboratories in Murray Hill, NJ where with Ralph Logn, C.J. Pinzone & Jan van der Ziel, he was the first to demonstrate the direct growth of GaAs lasers directly on silicon that could operate CW at room temperature. He extended his work to the growth of InP-InGaAsP by MOCVD and demonstrated the first long wavelength VCSEL to operate at 1.55 micron wavelength. He moved to academia in 1989 to become a chaired professor at the University of Texas at Austin at the Microelectronics Center established by Ben G Streetman.

Awards and memberships[edit]

A Georgia Research Alliance Eminent Scholar, Dupuis and two of his colleagues were awarded the 2002 National Medal of Technology by President George W. Bush for their work on developing and commercializing LEDs.[2] He won the 1985 IEEE Morris N. Liebmann Memorial Award. In 2015, Dupuis and four others shared the Charles Stark Draper Prize in Engineering given by the U.S. National Academy of Engineering.[3] He is a member of the National Academy of Engineering and is a Fellow of the IEEE, the American Physical Society, the American Association for the Advancement of Science, and the Optical Society of America.

Russell D. Dupuis won the 2004 John Bardeen Award[4] and the 2007 IEEE Edison Medal.[1][5]

References[edit]

  1. ^ a b c "Russell D. Dupuis". IEEE. 13 September 2017.
  2. ^ "President Bush Awards Georgia Tech Professor with National Medal of Technology". Georgia Institute of Technology. 2003-11-07. Archived from the original on 2006-09-05.
  3. ^ "Professor Russell Dupuis".
  4. ^ "Russell D. Dupuis 2004 John Bardeen Award Winner". IEEE LEOS Newsletter, Volume 17 Number 6. December 2003.
  5. ^ "Dupuis to be Awarded IEEE Edison Award". Georgia Institute of Technology. 2007-03-07. Archived from the original on 2007-03-16.

External links[edit]

Retrieved from "https://en.wikipedia.org/w/index.php?title=Russell_Dupuis&oldid=1221781593"