Indium antimonide

Crystal structure
__ In 3+      __ Sb 3−
General
Surname	Indium antimonide
Ratio formula	InSb
Brief description	silver-gray, odorless solid
External identifiers / databases
CAS number 1312-41-0 EC number 215-192-3 ECHA InfoCard 100,013,812 PubChem 3468413 ChemSpider 2709929 Wikidata Q418679
properties
Molar mass	236.6 g mol −1
Physical state	firmly
density	5.75 g cm −3
Melting point	535 ° C (decomposition)
solubility	almost insoluble in water
safety instructions
GHS hazard labeling from  Regulation (EC) No. 1272/2008 (CLP) , expanded if necessary danger H and P phrases H: 302-332-411 P: 261-264-273-301 + 330 + 331-391-501
MAK	0.5 mg m −3 (Sb). 0.1 mg m −3 (In)
As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Indium antimonide (InSb) is a chemical combination of indium (In) and antimony (Sb). It is one of the III-V semiconductors .

properties

Indium antimonide

Undoped indium antimonide has the greatest electron mobility of 78,000 cm ² / (V · s) of all known semiconductors at room temperature , which also results in the extremely high Hall constant of −2.4 · 10 ⁻⁴  m (compared to other materials) ³ / C explained. It is particularly suitable for the production of very fast electronic switches.

In addition, indium antimonide is used in optoelectronics as a material for infrared sensors , especially at wavelengths from 1000 nm to 5500 nm.

Semiconductor components made of indium antimonide have a diffusion voltage below 0.5 V, which enables lower operating voltages and thus lower power losses than silicon with 0.7 V.

Extraction and presentation

Indium antimonide is formed when the two highly pure elements melt together :

${\displaystyle \mathrm {In\ +\ Sb\longrightarrow \ InSb} }$

use

A layer of indium antimonide between aluminum indium antimonide can serve as a quantum well. Very fast switching transistors can be built from this. Bipolar transistors can be operated up to a cutoff frequency of 85 GHz and field effect transistors up to 200 GHz. The companies Intel and QinetiQ develop together on indium antimonide-based field effect transistors whose development has not been completed at present (2010).

Individual evidence

1. ↑ ^{a b c d e f g} data sheet Indium antimonide, 99.999% (metals basis) from AlfaAesar, accessed on December 7, 2019 ( PDF )(JavaScript required) .
2. ↑ Not explicitly listed in Regulation (EC) No. 1272/2008 (CLP) , but with the specified labeling it falls under the group entry antimony compounds, with the exception of the tetroxide (Sb2O4), pentoxide (Sb2O5), trisulphide (Sb2S3), pentasulphide (Sb2S5) and those specified elsewhere in this Annex in the Classification and Labeling Inventory of the European Chemicals Agency (ECHA), accessed on February 1, 2016. Manufacturers or distributors can expand the harmonized classification and labeling .
3. ^ Rode, DL: Electron Transport in InSb, InAs, and InP . In: Physical Review B . 3, 1971, p. 3287. doi : 10.1103 / PhysRevB.3.3287 .
4. ↑ 'Quantum well' transistor promises lean computing