Dawon Kahng
| Korean spelling | |
|---|---|
| Hangeul | 강대원 |
| Hanja | 姜 大 元 |
|
Revised Romanization |
Gang Dae-won |
|
McCune- Reischauer |
Kang Taewon |
Dawon Kahng (born May 4, 1931 in Keijō , Keikidō Sub- Province, Chōsen Province , then the Japanese Empire , now South Korea ; † May 13, 1992 in New Brunswick , New Jersey ) was a South Korean physicist and President of the NEC Research Institute . His inventions led to significant advances in electronics and microelectronics .
life and work
After serving in the South Korean marine infantry , Kahng first studied physics at Seoul National University . There he graduated with a Bachelor of Science (B.Sc.). D. Kahng then emigrated to the USA in 1955 to study at Ohio State University . After completing a Master of Science (M.Sc.) degree, he received his Ph.D. in 1959. He then worked for Bell Telephone Laboratories , now Lucent Technologies , in Murray Hill , NJ. There he worked under Martin Atalla at the production of a silicon - field effect transistor . Together they produced the first functional metal-oxide-semiconductor field effect transistor (MOS-FET) in 1960 and presented it at the IRE Solid-State Device Research Conference that same year. A corresponding patent was also applied for in 1960 . Since then, the silicon MOS transistor has developed into one of the most important components in electronics and now forms the basic element of most integrated circuits in millions and billions of times .
Kahng stayed with Bell Laboratories until he retired in 1988. There he led and supervised research groups in the field of high-frequency Schottky diodes , ferroelectric semiconductors , semiconductors with large band gaps , charge-coupled devices and flash memories . Kahng has received various awards for his work, including the Stuart Ballantine Medal from the Franklin Institute (1975) and the Distinguished Alumni Award from Ohio State University, College of Engineering. After leaving Bell Laboratories, Kahng became the founding president of the NEC Research Institute , which conducts long-term basic research in the field of computer and communication technologies.
D. Kahng died on May 13, 1992 at St. Peter's Hospital in New Brunswick of complications following emergency surgery for a ruptured aortic aneurysm . Kahng left behind his wife Young Hee and five children: Kim U., Vivienne, Lily, Eileen and Dwight.
swell
- Lee A. Daniels: Dr. Dawon Kahng, 61, Inventor In Field of Solid-State Electronics. May 28, 1992, accessed July 6, 2010 .
- Contributors. Dawon Kahng . In: IEEE Transactions on Electron Devices . tape 23 , no. 7 , 1976, p. 787 (curriculum vitae of Dawon Kahng).
Individual evidence
- ↑ Dawon Kahng. Computer History Museum, accessed July 6, 2010 .
- ^ Dawon Kahng: The thermionic emission microscope . 1956, OCLC 53452289 (Masters thesis from Ohio State University, 1956).
- ↑ Dawon Kahng: Phosphorus diffusion into silicon through an oxide layer . 1959, OCLC 53452289 (Doctoral Thesis, Ohio State University, 1959).
- ↑ D. Kahng, MM Atalla: Silicon-silicon dioxide surface device . In: IRE Device Research Conference, Pittsburg . 1960.
- ↑ Patent US3102230 : Electric field controlled semiconductor device. Registered May 31, 1960 , published 1963 , inventor: D. Kahng.
| personal data | |
|---|---|
| SURNAME | Kahng, Dawon |
| ALTERNATIVE NAMES | 강대원 (Korean, Hangeul); 姜 大 元 (Korean, Hanja); Gang, Dae-won (Revised Romanization); Kang, Taewŏn (McCune-Reischauer) |
| BRIEF DESCRIPTION | South Korean physicist |
| DATE OF BIRTH | May 4, 1931 |
| PLACE OF BIRTH | Keijō , Keikidō Province, Chōsen Province , former Japanese Empire , now South Korea |
| DATE OF DEATH | May 13, 1992 |
| Place of death | New Brunswick , New Jersey |