Samares Kar

from Wikipedia, the free encyclopedia

Samares Kar (* 4. January 1942 in Calcutta , India ; † 13. January 2017 ) was an Indian electrical engineer , consultant, university lecturer and publicist with focus on ultra-thin gate - dielectrics .

Life

Samares Kar grew up in Calcutta, West Bengal , India, and attended the Indian Institute of Technology Kharagpur , West Bengal, from 1958–1962 , with a Bachelor of Technology ( B.Tech. ) Degree in Electrical Engineering . At Lehigh University in Bethlehem , Pennsylvania , United States of America , he received his Master of Science ( MS ) in Electrical Engineering in 1967 and his Doctor of Philosophy ( Ph.D. ) in Electrical Engineering in 1970 .

In Germany Samares Kar was 1963-1965 first as a designer ( design engineer ) at the company Hamburger Transformatorenbau in Hamburg , then as a project engineer at company Continental electrical industry in Rheydt worked, from 1971 to 1974 as a research assistant at the Fraunhofer Institute for Applied Solid State Physics in Freiburg .

Samares Kar then went to the Indian Institute of Technology in Kanpur , Uttar Pradesh , India: 1975–1979 Assistant Professor of Electrical Engineering and Materials Science, 1980–2004 Full Professor of Electrical Engineering and Material Science, 2004–2006 Professor i. R. ( emeritus fellow ) and since 2006 R & D Consultant (R & D consultant). In the meantime he held teaching positions as visiting professor at the Pennsylvania State University , State College (Pennsylvania) (1979) and at Lehigh University, Bethlehem (1981).

Samares Kars memberships / participation in professional associations and organizations: Institute of Electrical and Electronics Engineers ( IEEE ), USA; The Electrochemical Society. , UNITED STATES; Techno India Group ; Meghna (th) d Saha Institute of Technology . Since 2002 he has been the main organizer of the International Symposium on High Dielectric Constant Materials .

Outside of his professional fields, Samares Kar did research on topics such as: Indian monsoons; Genetic Composition of South Asia in Correlation with Intelligence; Human migration in prehistoric times; The Metropolitan Museum of Art ; The Louvre ; Sites of ancient civilizations.

Services

His doctoral thesis from 1970 is already considered to be forward-looking.

Samares Kar's research in the field of semiconductor technology , particularly ultra-thin gate dielectrics , is considered groundbreaking.

Publications

Technical literature:

  • Samares Kar et al. (Ed.): Physics and Technology of High-K Gate Dielectrics (several volumes). The Electrochemical Society, 2003-2008 (main work).

Other:

  • Samares Kar: The Millennia Long Migration into Bengal: Rich Genetic Material and Enormous Promise in the Face of Chaos, Corruption, and Criminalization . In: Spaces & Flows: An International Journal of Urban & Extra Urban Studies . Vol. 2 Issue 2, 2012, pp. 129–143 ( full text and specialist biography at ResearchGate Network ).

Web links

Biography at prabook

Literature overviews:

Individual evidence

  1. ^ Obituary at Indian Institute of Technology, Kanpur
  2. Samares Kar: A critical study of the different methods of investigating semiconductor-insulator interface state properties . MS Thesis, Lehigh University. 1968, OCLC 84846514 .
  3. Samares Kar: Interface states and potential barriers in metal - (20 to 50 Å) SiO₂ - Si structures . Ph.D. Thesis, Lehigh University. 1971, OCLC 8811915 .
  4. Description of the characteristics of the respective positions in research and practice at ResearchGate Network , section Research Experience
  5. ^ "Study of Indian Monsoon; Genetic Composition of South Asia and Its Correlation with Intelligence; Human Migration in Pre-Historic Times; The Metropolitan Museum of Art; The Louvre; Sites of Ancient Civilizations ”at ResearchGate Network
  6. see section Education at ResearchGate Network : "This seminal work, carried out more than four decades ago, provided some important foundation for the current and future generation nano transistors."
  7. see biography for the book High Permittivity Gate Dielectric Materials at alibris : "His seminal work on ultrathin (2-4 nm) SiO2 gate dielectrics, carried out more than three decades ago, provides some basic theory and tools for the current and future generation MOS nano-transistors, in particular, on issues related to the ultimate gate dielectric thinness, electrical characterization, and metal-related interface states. "
  8. Further successes and awards at ResearchGate Network , section Awards & achievements