Difluorosilane

Structural formula
General
Surname	Difluorosilane
Molecular formula	SiH 2 F 2
Brief description	colorless gas
External identifiers / databases
PubChem	123331
Wikidata	Q16644597
properties
Molar mass	68.10 g mol −1
Physical state	gaseous
density	2.783 g l −1
Melting point	−122 ° C
boiling point	−77.8 ° C
safety instructions
GHS hazard labeling ; no classification available
GHS hazard labeling ; no classification available
	As far as possible and customary, SI units are used. Unless otherwise noted, the data given apply to standard conditions .

Difluorosilane is an inorganic chemical compound from the group of silanes .

Extraction and presentation

Difluorosilane can be obtained by reacting dichlorosilane with antimony (III) fluoride .

{\ displaystyle \ mathrm {3 \ SiH_ {2} Cl_ {2} +2 \ SbF_ {3} \ longrightarrow 3 \ SiH_ {2} F_ {2} +2 \ SbCl_ {3}}}

In addition to trifluorosilane, it is also formed when tetrafluorosilane reacts with hydrogen .

properties

Difluorosilane is a colorless gas and has the highest boiling point of all fluorosilanes. It decomposes at temperatures above 450 ° C to form SiHF ₃ , SiF ₄ and other compounds.

use

Difluorosilane can be used to deposit silicon nitride films.

Individual evidence

↑ ^a ^b ^c ^d ^e ^f William M. Haynes: CRC Handbook of Chemistry and Physics, 93rd Edition . CRC Press, 2016, ISBN 978-1-4398-8050-0 , pp. 87 ( limited preview in Google Book search).
↑ This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.
^ CC Addison: Inorganic Chemistry of the Main-Group Elements . Royal Society of Chemistry, 1973, ISBN 978-0-85186-752-6 , pp. 188 ( limited preview in Google Book search).
↑ Advances in Inorganic Chemistry and Radiochemistry . Academic Press, 1964, ISBN 978-0-08-057855-2 , pp. 167 ( limited preview in Google Book search).
↑ EAV Ebsworth: Volatile Silicon Compounds International Series of Monographs on Inorganic Chemistry . Elsevier, 2013, ISBN 978-1-4831-8055-7 , pp. 54 ( limited preview in Google Book search).
↑ Theodore M. Besmann: Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition . The Electrochemical Society, 1996, ISBN 978-1-56677-155-9 , pp. 203 ( limited preview in Google Book search).
↑ Nobuaki Watanabe, Mamoru Yoshida, Yi-Chao Jiang, Tutomu Nomoto, Ichimatsu Abiko: Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2 and NH3 Source Gases. In: Japanese Journal of Applied Physics. 30, 1991, p. L619, doi: 10.1143 / JJAP.30.L619 .

[William_M._Haynes-1] ↑ ^a ^b ^c ^d ^e ^f William M. Haynes: CRC Handbook of Chemistry and Physics, 93rd Edition . CRC Press, 2016, ISBN 978-1-4398-8050-0 , pp. 87 ( limited preview in Google Book search).

[NV-2] This substance has either not yet been classified with regard to its hazardousness or a reliable and citable source has not yet been found.

[C._C._Addison-3] CC Addison: Inorganic Chemistry of the Main-Group Elements . Royal Society of Chemistry, 1973, ISBN 978-0-85186-752-6 , pp. 188 ( limited preview in Google Book search).

[4] Advances in Inorganic Chemistry and Radiochemistry . Academic Press, 1964, ISBN 978-0-08-057855-2 , pp. 167 ( limited preview in Google Book search).

[E._A._V._Ebsworth-5] EAV Ebsworth: Volatile Silicon Compounds International Series of Monographs on Inorganic Chemistry . Elsevier, 2013, ISBN 978-1-4831-8055-7 , pp. 54 ( limited preview in Google Book search).

[Theodore_M._Besmann-6] Theodore M. Besmann: Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition . The Electrochemical Society, 1996, ISBN 978-1-56677-155-9 , pp. 203 ( limited preview in Google Book search).

[DOI10.1143/JJAP.30.L619-7] Nobuaki Watanabe, Mamoru Yoshida, Yi-Chao Jiang, Tutomu Nomoto, Ichimatsu Abiko: Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2 and NH3 Source Gases. In: Japanese Journal of Applied Physics. 30, 1991, p. L619, doi: 10.1143 / JJAP.30.L619 .